Philips Semiconductors Product specification
N-channel enhancement mode |
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IRFZ44NS |
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TrenchMOSTM transistor |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
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N-channel enhancement mode |
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PARAMETER |
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MAX. |
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UNIT |
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standard level field-effect power |
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transistor in a surface mounting |
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VDS |
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Drain-source voltage |
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55 |
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V |
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plastic envelope using 'trench' |
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ID |
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Drain current (DC) |
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49 |
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A |
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technology. The device features very |
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Ptot |
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Total power dissipation |
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110 |
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W |
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low on-state resistance and has |
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Tj |
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Junction temperature |
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175 |
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˚C |
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integral zener diodes giving ESD |
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RDS(ON) |
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Drain-source on-state |
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22 |
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mΩ |
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protection up to 2kV. It is intended for |
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resistance |
VGS = 10 V |
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use in switched mode power supplies |
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and general purpose switching |
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applications. |
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PINNING - SOT404 (D2PAK) |
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PIN CONFIGURATION |
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PIN DESCRIPTION
1gate
2drain
3source mb drain
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d |
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mb |
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g |
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2 |
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1 |
3 |
s |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VDS |
Drain-source voltage |
- |
- |
55 |
V |
VDGR |
Drain-gate voltage |
RGS = 20 kΩ |
- |
55 |
V |
±VGS |
Gate-source voltage |
- |
- |
20 |
V |
ID |
Drain current (DC) |
Tmb = 25 ˚C |
- |
49 |
A |
ID |
Drain current (DC) |
Tmb = 100 ˚C |
- |
35 |
A |
IDM |
Drain current (pulse peak value) |
Tmb = 25 ˚C |
- |
160 |
A |
Ptot |
Total power dissipation |
Tmb = 25 ˚C |
- |
110 |
W |
Tstg, Tj |
Storage & operating temperature |
- |
- 55 |
175 |
˚C |
ESD LIMITING VALUE
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VC |
Electrostatic discharge capacitor |
Human body model |
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2 |
kV |
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voltage, all pins |
(100 pF, 1.5 kΩ) |
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THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction to |
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1.4 |
K/W |
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mounting base |
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Rth j-a |
Thermal resistance junction to |
Minimum footprint, FR4 |
50 |
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K/W |
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ambient |
board |
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February 1999 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
N-channel enhancement mode |
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IRFZ44NS |
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TrenchMOSTM transistor |
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STATIC CHARACTERISTICS |
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Tj= 25˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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V(BR)DSS |
Drain-source breakdown |
VGS = 0 V; ID = 0.25 mA; |
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55 |
- |
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V |
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voltage |
Tj = -55˚C |
50 |
- |
- |
V |
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VGS(TO) |
Gate threshold voltage |
VDS = VGS; ID = 1 mA |
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2.0 |
3.0 |
4.0 |
V |
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Tj |
= 175˚C |
1.0 |
- |
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V |
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Tj = -55˚C |
- |
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4.4 |
μA |
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IDSS |
Zero gate voltage drain current |
VDS = 55 V; VGS = 0 V; |
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0.05 |
10 |
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Tj |
= 175˚C |
- |
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500 |
μA |
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IGSS |
Gate source leakage current |
VGS = ±10 V; VDS = 0 V |
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0.04 |
1 |
μA |
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Tj |
= 175˚C |
- |
- |
20 |
μA |
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±V(BR)GSS |
Gate source breakdown voltage |
IG = ±1 mA; |
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16 |
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V |
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RDS(ON) |
Drain-source on-state |
VGS = 10 V; ID = 25 A |
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15 |
22 |
mΩ |
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resistance |
Tj |
= 175˚C |
- |
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42 |
mΩ |
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DYNAMIC CHARACTERISTICS |
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Tmb = 25˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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gfs |
Forward transconductance |
VDS = 25 V; ID = 25 A |
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6 |
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S |
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Ciss |
Input capacitance |
VGS = 0 V; VDS = 25 V; f = 1 MHz |
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1350 |
1800 |
pF |
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Coss |
Output capacitance |
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330 |
400 |
pF |
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Crss |
Feedback capacitance |
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155 |
215 |
pF |
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Qg |
Total gate charge |
VDD = 44 V; ID = 50 A; VGS = 10 V |
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62 |
nC |
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Qgs |
Gate-cource charge |
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- |
15 |
nC |
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Qgd |
Gate-drain (miller) charge |
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26 |
nC |
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td on |
Turn-on delay time |
VDD = 30 V; ID = 25 A; |
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18 |
26 |
ns |
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tr |
Turn-on rise time |
VGS = 10 V; RG = 10 Ω |
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50 |
75 |
ns |
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td off |
Turn-off delay time |
Resistive load |
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40 |
50 |
ns |
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tf |
Turn-off fall time |
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30 |
40 |
ns |
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Ld |
Internal drain inductance |
Measured from upper edge of drain |
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2.5 |
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nH |
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tab to centre of die |
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Ls |
Internal source inductance |
Measured from source lead |
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7.5 |
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nH |
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soldering point to source bond pad |
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REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS |
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Tj = 25˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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IDR |
Continuous reverse drain |
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- |
49 |
A |
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current |
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IDRM |
Pulsed reverse drain current |
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- |
- |
160 |
A |
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VSD |
Diode forward voltage |
IF = 25 A; VGS = 0 V |
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0.95 |
1.2 |
V |
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IF = 40 A; VGS = 0 V |
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1.0 |
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trr |
Reverse recovery time |
IF = 40 A; -dIF/dt = 100 A/μs; |
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47 |
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ns |
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Qrr |
Reverse recovery charge |
VGS = -10 V; VR = 30 V |
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0.15 |
- |
μC |
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February 1999 |
2 |
Rev 1.000 |
Philips Semiconductors Product specification
N-channel enhancement mode |
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IRFZ44NS |
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TrenchMOSTM transistor |
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AVALANCHE LIMITING VALUE |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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WDSS |
Drain-source non-repetitive |
ID = 45 A; VDD £ 25 V; |
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- |
110 |
mJ |
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unclamped inductive turn-off |
VGS = 10 V; RGS = 50 W; Tmb = 25 ˚C |
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energy |
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120 |
PD% |
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Normalised Power Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
180 |
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Tmb / C |
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Fig.1. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25 ˚C = f(Tmb) |
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ID% |
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Normalised Current Derating |
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120 |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
180 |
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Tmb / C |
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Fig.2. Normalised continuous drain current. |
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ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS ³ 10 V |
1000 |
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ID/A |
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tp = |
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RDS(ON) =VDS/ID |
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100 |
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1 us |
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10us |
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100 us
10 |
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DC |
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1 ms |
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10ms |
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100ms |
1 |
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10 |
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100 |
1 |
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VDS/V |
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Fig.3. |
Safe operating area. Tmb = 25 ˚C |
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ID & IDM = f(VDS); IDM single pulse; parameter tp |
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10 Zth/(K/W) |
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1 |
0.5 |
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0.2 |
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0.1 |
0.1 |
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0.05 |
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P |
p |
tp |
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t |
D = T |
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0.02 |
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D |
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0.01 |
0 |
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T |
t |
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0.001 |
1E-06 |
0.0001 |
0.01 |
1 |
100 |
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t/s |
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Fig.4. Transient thermal impedance. |
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Zth j-mb = f(t); parameter D = tp/T |
February 1999 |
3 |
Rev 1.000 |