Philips IRFZ44N Datasheet

Philips Semiconductors Product specification

N-channel enhancement mode

IRFZ44N

TrenchMOSTM transistor

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

UNIT

standard level field-effect power

transistor in a plastic envelope using

VDS

Drain-source voltage

55

V

'trench' technology. The device

ID

Drain current (DC)

49

A

features very low on-state resistance

Ptot

Total power dissipation

110

W

and has integral zener diodes giving

Tj

Junction temperature

175

˚C

ESD protection up to 2kV. It is

RDS(ON)

Drain-source on-state

22

mΩ

intended for use in switched mode

resistance

VGS = 10 V

power supplies and general purpose

switching applications.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

d

tab

1

gate

2

drain

3

source

g

tab

drain

1 2 3

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	Drain-source voltage	-	-	55	V
VDGR	Drain-gate voltage	RGS = 20 kΩ	-	55	V
±VGS	Gate-source voltage	-	-	20	V
ID	Drain current (DC)	Tmb = 25 ˚C	-	49	A
ID	Drain current (DC)	Tmb = 100 ˚C	-	35	A
IDM	Drain current (pulse peak value)	Tmb = 25 ˚C	-	160	A
Ptot	Total power dissipation	Tmb = 25 ˚C	-	110	W
Tstg, Tj	Storage & operating temperature	-	- 55	175	˚C

ESD LIMITING VALUE

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VC	Electrostatic discharge capacitor	Human body model	-	2	kV
	voltage, all pins	(100 pF, 1.5 kΩ)

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction to	-	-	1.4	K/W
	mounting base
Rth j-a	Thermal resistance junction to	in free air	60	-	K/W
	ambient

February 1999

1

Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode						IRFZ44N
TrenchMOSTM transistor
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
V(BR)DSS	Drain-source breakdown	VGS = 0 V; ID = 0.25 mA;		55	-	-	V
	voltage	Tj = -55˚C		50	-	-	V
VGS(TO)	Gate threshold voltage	VDS = VGS; ID = 1 mA		2.0	3.0	4.0	V
		Tj	= 175˚C	1.0	-	-	V
		Tj = -55˚C		-	-	4.4	μA
IDSS	Zero gate voltage drain current	VDS = 55 V; VGS = 0 V;		-	0.05	10
		Tj	= 175˚C	-	-	500	μA
IGSS	Gate source leakage current	VGS = ±10 V; VDS = 0 V		-	0.04	1	μA
		Tj	= 175˚C	-	-	20	μA
±V(BR)GSS	Gate source breakdown voltage	IG = ±1 mA;		16	-	-	V
RDS(ON)	Drain-source on-state	VGS = 10 V; ID = 25 A		-	15	22	mΩ
	resistance	Tj	= 175˚C	-	-	42	mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
gfs	Forward transconductance	VDS = 25 V; ID = 25 A		6	-	-	S
Ciss	Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz		-	1350	1800	pF
Coss	Output capacitance			-	330	400	pF
Crss	Feedback capacitance			-	155	215	pF
Qg	Total gate charge	VDD = 44 V; ID = 50 A; VGS = 10 V		-	-	62	nC
Qgs	Gate-cource charge			-	-	15	nC
Qgd	Gate-drain (miller) charge			-	-	26	nC
td on	Turn-on delay time	VDD = 30 V; ID = 25 A;		-	18	26	ns
tr	Turn-on rise time	VGS = 10 V; RG = 10 Ω		-	50	75	ns
td off	Turn-off delay time	Resistive load		-	40	50	ns
tf	Turn-off fall time			-	30	40	ns
Ld	Internal drain inductance	Measured from contact screw on		-	3.5	-	nH
		tab to centre of die
Ld	Internal drain inductance	Measured from drain lead 6 mm		-	4.5	-	nH
		from package to centre of die
Ls	Internal source inductance	Measured from source lead 6 mm		-	7.5	-	nH
		from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IDR	Continuous reverse drain			-	-	49	A
	current
IDRM	Pulsed reverse drain current			-	-	160	A
VSD	Diode forward voltage	IF = 25 A; VGS = 0 V		-	0.95	1.2	V
		IF = 40 A; VGS = 0 V		-	1.0	-
trr	Reverse recovery time	IF = 40 A; -dIF/dt = 100 A/μs;		-	47	-	ns
Qrr	Reverse recovery charge	VGS = -10 V; VR = 30 V		-	0.15	-	μC

February 1999

2

Rev 1.000

Philips Semiconductors Product specification

N-channel enhancement mode					IRFZ44N
TrenchMOSTM transistor
AVALANCHE LIMITING VALUE
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
WDSS	Drain-source non-repetitive	ID = 45 A; VDD £ 25 V;	-	-	110	mJ
	unclamped inductive turn-off	VGS = 10 V; RGS = 50 W; Tmb = 25 ˚C
	energy

120	PD%					Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140	160	180
					Tmb / C
	Fig.1.		Normalised power dissipation.
		PD% = 100×PD/PD 25 ˚C = f(Tmb)

ID%					Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0	20	40	60	80	100	120	140	160	180
				Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS ³ 10 V

1000
ID/A
		tp =
	RDS(ON) =VDS/ID
100		1 us
		10us

100 us

10			DC
						1 ms
						10ms
						100ms
1				10		100
1					VDS/V
Fig.3.		Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
10 Zth/(K/W)
1	0.5
	0.2
0.1	0.1
	0.05
				P	p	tp
					t	D = T
	0.02			D
0.01	0				T	t
0.001	1E-06		0.0001	0.01	1	100
				t/s
	Fig.4. Transient thermal impedance.
	Zth j-mb = f(t); parameter D = tp/T

February 1999

3

Rev 1.000