PD - 9.1492A
PRELIMINARY IRFP9140N
HEXFET® Power MOSFET
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lP-Channel
l |
Fast Switching |
G |
l |
Fully Avalanche Rated |
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
D
VDSS = -100V
RDS(on) = 0.117Ω
ID = -23A
S
TO-247AC |
Absolute Maximum Ratings
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Parameter |
Max. |
Units |
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ID @ TC = 25°C |
Continuous Drain Current, V GS @ -10V |
-23 |
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ID @ TC = 100°C |
Continuous Drain Current, V GS @ -10V |
-16 |
A |
IDM |
Pulsed Drain Current •… |
-76 |
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PD @TC = 25°C |
Power Dissipation |
140 |
W |
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Linear Derating Factor |
0.91 |
W/°C |
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VGS |
Gate-to-Source Voltage |
± 20 |
V |
EAS |
Single Pulse Avalanche Energy‚… |
430 |
mJ |
IAR |
Avalanche Current• |
-11 |
A |
EAR |
Repetitive Avalanche Energy• |
14 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt ƒ… |
-5.0 |
V/ns |
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TJ |
Operating Junction and |
-55 to + 175 |
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TSTG |
Storage Temperature Range |
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°C |
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Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
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Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
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Thermal Resistance
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Parameter |
Typ. |
Max. |
Units |
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RθJC |
Junction-to-Case |
––– |
1.1 |
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RθCS |
Case-to-Sink, Flat, Greased Surface |
0.24 |
––– |
°C/W |
RθJA |
Junction-to-Ambient |
––– |
40 |
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3/16/98
IRFP9140N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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V(BR)DSS |
Drain-to-Source Breakdown Voltage |
-100 |
––– |
––– |
V |
VGS = 0V, ID = -250µA |
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V(BR)DSS/ TJ |
Breakdown Voltage Temp. Coefficient |
––– |
-0.11 |
––– |
V/°C |
Reference to 25°C, I D = -1mA… |
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RDS(on) |
Static Drain-to-Source On-Resistance |
––– |
––– |
0.117 |
Ω |
VGS = -10V, ID = -13A „ |
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VGS(th) |
Gate Threshold Voltage |
-2.0 |
––– |
-4.0 |
V |
VDS = VGS, ID = -250µA |
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gfs |
Forward Transconductance |
5.3 |
––– |
––– |
S |
VDS = -50V, ID = 11A… |
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IDSS |
Drain-to-Source Leakage Current |
––– |
––– |
-25 |
µA |
VDS = -100V, VGS = 0V |
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––– |
––– |
-250 |
VDS = -80V, VGS = 0V, TJ = 150°C |
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IGSS |
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Gate-to-Source Forward Leakage |
––– |
––– |
100 |
nA |
VGS = 20V |
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Gate-to-Source Reverse Leakage |
––– |
––– |
-100 |
VGS = -20V |
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Qg |
Total Gate Charge |
––– |
––– |
97 |
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ID = -11A |
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Qgs |
Gate-to-Source Charge |
––– |
––– |
15 |
nC |
VDS = -80V |
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Qgd |
Gate-to-Drain ("Miller") Charge |
––– |
––– |
51 |
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VGS = -10V, See Fig. 6 and 13 „… |
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td(on) |
Turn-On Delay Time |
––– |
15 |
––– |
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VDD = -50V |
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tr |
Rise Time |
––– |
67 |
––– |
ns |
ID = -11A |
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td(off) |
Turn-Off Delay Time |
––– |
51 |
––– |
RG = 5.1Ω |
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tf |
Fall Time |
––– |
51 |
––– |
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RD = 4.2Ω, See Fig. 10 „… |
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LD |
Internal Drain Inductance |
––– |
5.0 |
––– |
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Between lead, |
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D |
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6mm (0.25in.) |
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nH |
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LS |
Internal Source Inductance |
––– |
13 |
––– |
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from package |
G |
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and center of die contact |
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S |
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Ciss |
Input Capacitance |
––– |
1300 |
––– |
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VGS = 0V |
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Coss |
Output Capacitance |
––– |
400 |
––– |
pF |
VDS = -25V |
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Crss |
Reverse Transfer Capacitance |
––– |
240 |
––– |
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ƒ = 1.0MHz, See Fig. 5… |
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Source-Drain Ratings and Characteristics
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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IS |
Continuous Source Current |
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-23 |
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MOSFET symbol |
D |
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(Body Diode) |
––– |
––– |
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showing the |
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A |
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ISM |
Pulsed Source Current |
––– |
––– |
-76 |
integral reverse |
G |
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(Body Diode) •… |
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p-n junction diode. |
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S |
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VSD |
Diode Forward Voltage |
––– |
––– |
-1.3 |
V |
TJ = 25°C, IS = -13A, VGS = 0V „ |
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trr |
Reverse Recovery Time |
––– |
150 |
220 |
ns |
TJ = 25°C, IF = -11A |
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Qrr |
Reverse RecoveryCharge |
––– |
830 |
1200 |
µC |
di/dt = -100A/µs „ |
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ton |
Forward Turn-On Time |
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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Notes:
•Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting TJ = 25°C, L = 7.1mH |
… Uses IRF9540N data and test conditions |
RG = 25Ω, IAS = -11A. (See Figure 12) |
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ƒISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
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IRFP9140N |
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100 |
VGS |
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100 |
VGS |
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TOP |
- 15V |
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TOP |
- 15V |
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- 10V |
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- 10V |
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) |
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- 8.0V |
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) |
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- 8.0V |
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- 7.0V |
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- 7.0V |
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(A |
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- 6.0V |
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(A |
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- 6.0V |
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- 5.5V |
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- 5.5V |
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ource C urrent |
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ource C urrent |
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- 5.0V |
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- 5.0V |
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BOTTOM - 4.5V |
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BOTTOM - 4.5V |
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10 |
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10 |
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, D rain-to -S |
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, D rain -to -S |
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-4.5V |
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D |
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D |
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-I |
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-I |
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-4.5V |
20µ s PU LS E W IDTH |
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20µ s PU LS E W IDTH |
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1 |
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Tc = 25°C |
A |
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1 |
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TC = 175°C |
A |
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0.1 |
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1 |
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10 |
100 |
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0.1 |
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1 |
10 |
100 |
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-V |
, D rain-to-Source Voltage (V) |
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-V |
, D rain-to-Source Voltage (V) |
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D S |
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D S |
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Fig 1. Typical Output Characteristics |
Fig 2. Typical Output Characteristics |
100 |
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2.5 |
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TJ = 25°C |
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O n R esistance |
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2.0 |
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T |
= 175°C |
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10 |
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J |
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urreC(Ant) |
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D rain -to -S ource |
(N orm alized) |
1.5 |
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1.0 |
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1 |
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urceraintoSo-- |
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D |
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, |
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0.5 |
, |
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) |
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D |
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n |
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-I |
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V DS = -25V |
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S(o |
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D |
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R |
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0.1 |
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20µs PULS E W ID TH |
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10 A |
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0.0 |
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4 |
5 |
6 |
7 |
8 |
9 |
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-VG S , G ate -to -S ource V oltage (V ) |
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ID = -19A |
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VG S |
= -10V |
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A |
-60 -40 -20 |
0 |
20 |
40 |
60 |
80 100 120 140 160 180 |
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TJ |
, Junction Tem perature (°C) |
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Fig 3. Typical Transfer Characteristics |
Fig 4. Normalized On-Resistance |
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Vs. Temperature |
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