Philips IRFP460 Datasheet

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching V

d

= 500 V

DSS

• Stable off-state characteristics

• High thermal cycling performance I

• Low thermal resistance

g

s

R

DS(ON)

= 20 A

D

≤ 0.27 Ω

GENERAL DESCRIPTION PINNING SOT429 (TO247)

N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.

The IRFP460 is supplied in the

tab drain

2

1

3

SOT429 (TO247) conventional
leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

DGR

V

GS

I

D

I

DM

P

D

Tj, T

Drain-source voltage Tj = 25 ˚C to 150˚C - 500 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 500 V
Gate-source voltage - ± 30 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 20 A

Tmb = 100 ˚C; VGS = 10 V - 12.4 A
Pulsed drain current Tmb = 25 ˚C - 80 A
Total dissipation Tmb = 25 ˚C - 250 W
Operating junction and - 55 150 ˚C

stg

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

E

AR

IAS, I

1 pulse width and repetition rate limited by Tj max.

September 1999 1 Rev 1.000

Non-repetitive avalanche Unclamped inductive load, IAS = 20 A; - 1300 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
Repetitive avalanche energy1IAR = 20 A; tp = 2.5 µs; Tj prior to - 32 mJ

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive - 20 A

AR

avalanche current

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V

(BR)DSS

∆T

j

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

Thermal resistance junction - - 0.5 K/W
to mounting base
Thermal resistance junction SOT429 package, in free air - 45 - K/W
to ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 500 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K

voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 10 A - 0.2 0.27 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 10 A 13 18 - S
Drain-source leakage current VDS = 500 V; VGS = 0 V - 2 50 µA

VDS = 400 V; VGS = 0 V; Tj = 125 ˚C - 100 1000 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA

Total gate charge ID = 20 A; V
Gate-source charge - 12 18 nC

= 400 V; VGS = 10 V - 147 190 nC

DD

Gate-drain (Miller) charge - 78 100 nC
Turn-on delay time VDD = 250 V; RD = 12 Ω; - 23 - ns

Turn-on rise time RG = 3.9 Ω -72-ns
Turn-off delay time - 150 - ns
Turn-off fall time - 75 - ns

Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 3000 - pF

Output capacitance - 480 - pF
Feedback capacitance - 270 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

September 1999 2 Rev 1.000

Continuous source current Tmb = 25˚C - - 20 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 80 A
diode)
Diode forward voltage IS = 20 A; VGS = 0 V - - 1.5 V

Reverse recovery time IS = 20 A; VGS = 0 V; dI/dt = 100 A/µs - 900 - ns
Reverse recovery charge - 15 - µC

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

P

D

PHW20N50E

D = tp/T

tp

T

Zth j-mb (K/W)

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

single pulse

0.001
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Pulse width, tp (s)

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

Drain Current, ID (A)

20

Tj = 25 C

18
16
14
12
10

8
6
4
2
0

012345

Drain-Source Voltage, VDS (V)

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

PHW20N50E

VGS = 10 V

8 V

5 V

4.8 V

4.6 V

4.4 V

4.2 V
4 V

.

GS

Peak Pulsed Drain Current, IDM (A)

100

10

RDS(on) = VDS/ ID

1

0.1
10 100 1000

Drain-Source Voltage, VDS (V)

d.c.

PHW20N50E

tp = 10 us

100us

1 ms

10 ms

100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Drain-Source On Resistance, RDS(on) (Ohms)

0.5
4V

4.2V

0.45

0.4

0.35

0.3

0.25

0.2

0 2 4 6 8 101214161820

4.6 V

4.4 V

4.8V

Drain Current, ID (A)

5V

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

PHW20N50E

Tj = 25 C

VGS = 6 V

10V

.

GS

September 1999 3 Rev 1.000