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PD - 94008 |
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IRFP250N |
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HEXFET® Power MOSFET |
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l |
Advanced Process Technology |
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D |
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VDSS = 200V |
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l |
Dynamic dv/dt Rating |
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l |
175°C Operating Temperature |
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RDS(on) = 0.075Ω |
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Fast Switching |
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l |
Fully Avalanche Rated |
G |
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l |
Ease of Paralleling |
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ID = 30A |
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Simple Drive Requirements |
S |
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
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TO-247AC |
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Absolute Maximum Ratings |
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Parameter |
Max. |
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Units |
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ID @ TC = 25°C |
Continuous Drain Current, V GS @ 10V |
30 |
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ID @ TC = 100°C |
Continuous Drain Current, V GS @ 10V |
21 |
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A |
IDM |
Pulsed Drain Current • |
120 |
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PD @TC = 25°C |
Power Dissipation |
214 |
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W |
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Linear Derating Factor |
1.4 |
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W/°C |
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VGS |
Gate-to-Source Voltage |
± 20 |
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V |
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EAS |
Single Pulse Avalanche Energy‚ |
315 |
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mJ |
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IAR |
Avalanche Current• |
30 |
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A |
EAR |
Repetitive Avalanche Energy• |
21 |
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mJ |
dv/dt |
Peak Diode Recovery dv/dt ƒ |
8.6 |
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V/ns |
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TJ |
Operating Junction and |
-55 to +175 |
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TSTG |
Storage Temperature Range |
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°C |
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Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
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Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
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Thermal Resistance |
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Parameter |
Typ. |
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Max. |
Units |
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RθJC |
Junction-to-Case |
––– |
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0.7 |
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RθCS |
Case-to-Sink, Flat, Greased Surface |
0.24 |
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––– |
°C/W |
RθJA |
Junction-to-Ambient |
––– |
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40 |
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www.irf.com |
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1 |
10/09/00
IRFP250N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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V(BR)DSS |
Drain-to-Source Breakdown Voltage |
200 |
––– |
––– |
V |
VGS = 0V, ID = 250µA |
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V(BR)DSS/ TJ |
Breakdown Voltage Temp. Coefficient |
––– |
0.26 |
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V/°C |
Reference to 25°C, I D = 1mA |
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RDS(on) |
Static Drain-to-Source On-Resistance |
––– |
––– |
0.075 |
Ω |
VGS = 10V, ID = 18A „ |
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VGS(th) |
Gate Threshold Voltage |
2.0 |
––– |
4.0 |
V |
VDS = VGS, ID = 250µA |
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gfs |
Forward Transconductance |
17 |
––– |
––– |
S |
VDS = 50V, ID = 18A „ |
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IDSS |
Drain-to-Source Leakage Current |
––– |
––– |
25 |
µA |
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VDS = 200V, VGS = 0V |
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––– |
––– |
250 |
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VDS = 160V, VGS = 0V, TJ = 150°C |
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IGSS |
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Gate-to-Source Forward Leakage |
––– |
––– |
100 |
nA |
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VGS = 20V |
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Gate-to-Source Reverse Leakage |
––– |
––– |
-100 |
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VGS = -20V |
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Qg |
Total Gate Charge |
––– |
––– |
123 |
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ID = 18A |
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Qgs |
Gate-to-Source Charge |
––– |
––– |
21 |
nC |
VDS = 160V |
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Qgd |
Gate-to-Drain ("Miller") Charge |
––– |
––– |
57 |
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VGS = 10V, See Fig. 6 and 13 |
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td(on) |
Turn-On Delay Time |
––– |
14 |
––– |
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VDD = 100V |
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tr |
Rise Time |
––– |
43 |
––– |
ns |
ID = 18A |
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td(off) |
Turn-Off Delay Time |
––– |
41 |
––– |
RG = 3.9Ω |
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tf |
Fall Time |
––– |
33 |
––– |
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RD = 5.5Ω, See Fig. 10 „ |
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LD |
Internal Drain Inductance |
––– |
4.5 |
––– |
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Between lead, |
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D |
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6mm (0.25in.) |
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nH |
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LS |
Internal Source Inductance |
––– |
7.5 |
––– |
from package |
G |
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and center of die contact |
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S |
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Ciss |
Input Capacitance |
––– |
2159 |
––– |
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VGS = 0V |
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Coss |
Output Capacitance |
––– |
315 |
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pF |
VDS = 25V |
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Crss |
Reverse Transfer Capacitance |
––– |
83 |
––– |
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ƒ = 1.0MHz, See Fig. 5 |
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Source-Drain Ratings and Characteristics
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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IS |
Continuous Source Current |
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MOSFET symbol |
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D |
––– |
––– |
30 |
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(Body Diode) |
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showing the |
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A |
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ISM |
Pulsed Source Current |
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integral reverse |
G |
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(Body Diode)• |
––– |
––– |
120 |
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p-n junction diode. |
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S |
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VSD |
Diode Forward Voltage |
––– |
––– |
1.3 |
V |
TJ = 25°C, I S = 18A, VGS = 0V „ |
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trr |
Reverse Recovery Time |
––– |
186 |
279 |
ns |
TJ = 25°C, I F = 18A |
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Qrr |
Reverse Recovery Charge |
––– |
1.3 |
2.0 |
μC |
di/dt = 100A/µs „ |
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ton |
Forward Turn-On Time |
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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Notes:
•Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
‚Starting TJ = 25°C, L = 1.9mH
RG = 25Ω, IAS = 18A. (See Figure 12)
ƒISD ≤ 18A, di/dt ≤ 374A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„Pulse width ≤ 300µs; duty cycle ≤ 2%.
2 |
www.irf.com |
1000 |
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VGS |
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(A) |
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TOP |
15V |
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10V |
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8.0V |
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Current |
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7.0V |
100 |
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6.0V |
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5.5V |
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5.0V |
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BOTTOM 4.5V |
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-to-Source |
10 |
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1 |
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4.5V |
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Drain |
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D 0.1 |
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I |
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20µs PULSE WIDTH
0.01 |
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T |
J |
= 25 |
° |
C |
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0.1 |
1 |
10 |
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100 |
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VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
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IRFP250N |
1000 |
VGS |
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(A) |
TOP |
15V |
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10V |
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8.0V |
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Source Current |
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7.0V |
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6.0V |
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100 |
5.5V |
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5.0V |
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BOTTOM4.5V |
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10 |
4.5V |
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Drain-to |
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1 |
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D |
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I |
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20µs PULSE WIDTH
0.1 |
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T |
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= 175 |
° |
C |
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0.1 |
1 |
10 |
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100 |
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VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000 |
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, Drain-to-Source On Resistance |
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3.5 |
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ID = 30A |
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Drain-to-Source Current (A) |
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3.0 |
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100 |
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2.5 |
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T |
J |
= 175° |
C |
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(Normalized) |
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2.0 |
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10 |
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T = 25° C |
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1.5 |
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J |
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1.0 |
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1 |
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, |
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D |
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DS(on) |
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I |
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0.5 |
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V DS = 50V |
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VGS = 10V |
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20µs PULSE WIDTH |
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0.1 |
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R |
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0.0 |
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0 |
20 40 60 |
80 100 120 140 160 180 |
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4.0 |
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5.0 |
6.0 |
7.0 |
8.0 |
9.0 |
10.0 |
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-60 -40 -20 |
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V |
, Gate-to-Source Voltage (V) |
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T |
, Junction Temperature(° C) |
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GS |
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J |
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Fig 3. Typical Transfer Characteristics |
Fig 4. Normalized On-Resistance |
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Vs. Temperature |
www.irf.com |
3 |
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