Philips irfp140n DATASHEETS
HEXFET® Power MOSFET
TO-247AC
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
PD - 91343B
IRFP140N
D
V
= 100V
DSS
G
R
DS(on)
= 0.052Ω
Description
S
ID = 33A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
I
DM
PD @TC = 25°C Power Dissipation 140 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 110
Linear Derating Factor 0.91 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 300 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 14 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 1.1
Case-to-Sink, Flat, Greased Surface –––– 0.24 –––– °C/W
Junction-to-Ambient –––– –––– 40
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10/5/98
IRFP140N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.052 Ω VGS = 10V, ID = 16A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 16A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
µA
nA
Total Gate Charge ––– ––– 94 ID = 16A
Gate-to-Source Charge ––– ––– 15 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 43 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.2 ––– VDD = 50V
Rise Time ––– 39 ––– ID = 16A
Turn-Off Delay Time ––– 44 ––– RG = 5.1Ω
ns
Fall Time ––– 33 ––– RD = 3.0Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
–––
–––
5.0
13
–––
–––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1400 ––– VGS = 0V
Output Capacitance ––– 330 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 33
A
––– ––– 110
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time ––– 170 250 ns TJ = 25°C, IF = 16A
Reverse RecoveryCharge – –– 1.1 1.6 µC di/dt = 100A/µs
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
= 25V, starting TJ = 25°C, L = 2.0mH
DD
RG = 25Ω, I
= 16A. (See Figure 12)
AS
I
≤ 16A, di/dt ≤ 210A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%. V
Uses IRF540N data and test conditions.
,
2 www.irf.com
D
S
1000
)
A
)
A
A
A
100
VG S
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRFP140N
10
D
I , Dra in-to -S ou rc e C urre n t (A)
4.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Drain-to-Sourc e Vo ltage (V
DS
C
Fig 1. Typical Output Characteristics
1000
100
10
T = 25°C
J
T = 175°C
J
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in-t o- S o u rc e Voltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = 27 A
D
2.5
2.0
1.5
(N orma l i z ed)
1.0
D
I , Dra in-to -S o urc e C u rre nt (A )
1
45678910
V , Gate -to-S o urce Vo ltage (V)
GS
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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