Philips irfp044n DATASHEETS
l Advanced Process Technology
TO-247AC
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
PD - 9.1410A
IRFP044N
HEXFET® Power MOSFET
D
S
R
DS(on)
V
DSS
= 0.020Ω
ID = 53A
= 55V
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53
@ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A
I
D
I
DM
PD @TC = 25°C Power Dissipation 120 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 180
Linear Derating Factor 0.77 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 230 mJ
Avalanche Current 28 A
Repetitive Avalanche Energy 12 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.3
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
°C
8/25/97
IRFP044N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.017 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– – –– 0.020 Ω VGS = 10V, ID = 29A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 16 ––– ––– S VDS = 25V, ID = 28A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 61 ID = 28A
Gate-to-Source Charge ––– ––– 13 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 24 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 28V
Rise Time ––– 80 ––– ID = 28A
Turn-Off Delay Time ––– 43 ––– RG = 12Ω
ns
Fall Time ––– 52 ––– RD = 0.98Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
5.0
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1500 ––– VGS = 0V
Output Capacitance ––– 450 ––– pF VDS = 25V
Reverse Transfer Capacitance –– – 1 60 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 28A
Reverse Recovery Charge ––– 210 310 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25V, starting TJ = 25°C, L = 410µH
= 28A. (See Figure 12)
AS
≤ 28A, di/dt ≤ 240A/µs, V
DD
≤ V
(BR)DSS
Uses IRFZ46N data and test conditions
,
53
180
showing the
A
p-n junction diode.
D
G
S
IRFP044N
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
10
4.5V
D
I , D rain -to-S ourc e Current (A)
20µs PULSE WIDTH
T = 25° C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
10
D
I , Drain-to-Sou rce C urrent (A )
4.5V
20µs P ULSE W I DTH
T = 175°C
A
1
0.1 1 10 100
V , Drain-to-So urc e V oltag e (V)
DS
C
A
Fig 2. Typical Output Characteristics
2.5
I = 46A
D
T = 25°C
100
10
D
I , D ra in-to - So urc e Cu r re nt (A)
1
45678910
V , Ga te-to-Source Voltage (V )
GS
J
T = 175°C
J
V = 25 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(No rm a lized)
0.5
DS(on)
R , Dr ain -to-S ou rc e O n R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tio n T em peratu r e (° C)
J
V = 10V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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