Philips IRF640S, IRF640 Datasheet
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF640, IRF640S
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance V
d
= 200 V
DSS
• Fast switching
• Low thermal resistance I
g
s
R
DS(ON)
= 16 A
D
≤ 180 mΩ
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switchedmodepowersupplies, T.V. andcomputermonitorpowersupplies, d.c. tod.c.converters,motor control circuits
and general purpose switching applications.
The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING SOT78 (TO220AB) SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
2 drain
1
3 source
tab drain
tab
123
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Tj, T
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999 1 Rev 1.100
Drain-source voltage Tj = 25 ˚C to 175˚C - 200 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ - 200 V
Gate-source voltage - ± 20 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 16 A
Tmb = 100 ˚C; VGS = 10 V - 11 A
Pulsed drain current Tmb = 25 ˚C - 64 A
Total power dissipation Tmb = 25 ˚C - 136 W
Operating junction and - 55 175 ˚C
stg
storage temperature
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF640, IRF640S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
I
AS
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
Non-repetitive avalanche Unclamped inductive load, IAS = 6.2 A; - 580 mJ
energy tp = 720 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig;14
Peak non-repetitive - 16 A
avalanche current
Thermal resistance junction - - 1.1 K/W
to mounting base
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 200 - - V
voltage Tj = -55˚C 178 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 175˚C 1 - - V
Tj = -55˚C - 6 V
Drain-source on-state VGS = 10 V; ID = 8 A - 130 180 mΩ
resistance Tj = 175˚C - - 522 mΩ
Gate source leakage current VGS = ± 20 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 200 V; VGS = 0 V; - 0.05 10 µA
current VDS = 160 V; VGS = 0 V; Tj = 175˚C - - 250 µA
Total gate charge ID = 18 A; V
= 160 V; VGS = 10 V - - 63 nC
DD
Gate-source charge - - 12 nC
Gate-drain (Miller) charge - - 35 nC
Turn-on delay time VDD = 100 V; RD = 5.6 Ω; - 12 - ns
Turn-on rise time VGS = 10 V; RG = 5.6 Ω -45-ns
Turn-off delay time Resistive load - 54 - ns
Turn-off fall time - 38 - ns
Internal drain inductance Measured tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1850 - pF
Output capacitance - 170 - pF
Feedback capacitance - 91 - pF
August 1999 2 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF640, IRF640S
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current - - 16 A
(body diode)
Pulsed source current (body - - 64 A
diode)
Diode forward voltage IF = 18 A; VGS = 0 V - 1.0 1.5 V
Reverse recovery time IF = 18 A; -dIF/dt = 100 A/µs; - 130 - ns
Reverse recovery charge VGS = 0 V; VR = 25 V - 0.8 - µC
August 1999 3 Rev 1.100
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