Philips ED1802 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
ED1802
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 27
Philips Semiconductors Product specification
PNP general purpose transistor ED1802
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 25 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: ED1702.
handbook, halfpage
1
2
3
2
MAM281
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−30 V
collector-emitter voltage open base −−25 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
3
1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP general purpose transistor ED1802
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0; VCB= −20 V −−100 nA
I
= 0; VCB= −20 V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−500 nA
DC current gain IC= −500 mA; VCE= −1V 40 −
I
=−100 mA; VCE= −1 V 106 476
C
DC current gain IC= −100 mA; VCE= −1V
ED1802K 106 150
ED1802L 132 189
ED1802M 170 233
ED1802N 213 300
ED1802P 333 476
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA; note 1 −−700 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 15 pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 80 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 27 3
Loading...