Philips ED1702 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
ED1702
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 27
Philips Semiconductors Product specification
NPN general purpose transistor ED1702
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 25 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: ED1802.
handbook, halfpage
1
2
3
2
MAM182
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 5V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
3
1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
NPN general purpose transistor ED1702
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0; VCB=20V − 100 nA
I
= 0; VCB= 20 V; Tj= 150 °C − 5 µA
E
emitter cut-off current IC= 0; VEB=5V − 500 nA
DC current gain IC= 500 mA; VCE=1V 40 −
I
= 100 mA; VCE= 1 V 132 476
C
DC current gain IC= 100 mA; VCE=1V
ED1702L 132 189
ED1702M 170 233
ED1702N 213 300
ED1702O 263 370
ED1702P 333 476
collector-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 − 700 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 6pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 80 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 27 3
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