Philips ED1602 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
M3D186
ED1602
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 27
Philips Semiconductors Product specification
PNP general purpose transistor ED1602
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 20 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• Audio pre-amplifiers and driver stages
• FM multiplex stereo decoders
• Small-signal circuits in television receivers
• Medium speed switching.
DESCRIPTION
handbook, halfpage
1
2
3
MAM281
3
2
1
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: ED1402.
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−4V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP general purpose transistor ED1602
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB= −20 V −−15 nA
I
= 0; VCB= −10 V; Tj= 150 °C −−20 µA
E
emitter cut-off current IC= 0; VEB= −4V −−100 nA
DC current gain IC= −2 mA; VCE= −5V
ED1602C 125 190
ED1602D 170 260
ED1602E 223 475
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−300 mV
I
= −100 mA; IB= −5mA −−650 mV
C
base-emitter voltage IC= −2 mA; VCE= −5V −500 −750 mV
collector capacitance IE=ie= 0; VCB= −10V; f = 1 MHz − 5pF
transition frequency IC= −5 mA; VCE= −5V;
100 − MHz
f = 100 MHz
= −0.2 mA; VCE= −5V;
C
− 4dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
1999 Apr 27 3
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