Philips ED1402 Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 27
DISCRETE SEMICONDUCTORS
ED1402
NPN general purpose transistor
ook, halfpage
M3D186
1999 Apr 27 2
Philips Semiconductors Product specification
NPN general purpose transistor ED1402
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 20 V)
• High gain.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a plastic TO-92; SOT54 package.
PNP complement: ED1602.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM182
3
2
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 28 V
V
CEO
collector-emitter voltage open base − 20 V
V
EBO
emitter-base voltage open collector − 6V
I
C
collector current (DC) − 200 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 500 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 27 3
Philips Semiconductors Product specification
NPN general purpose transistor ED1402
THERMAL CHARACTERISTICS
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB=30V − 15 nA
I
E
= 0; VCB= 30 V; Tj= 150 °C − 5 µA
I
EBO
emitter cut-off current IC= 0; VEB=5V − 100 nA
h
FE
DC current gain IC= 2 mA; VCE=5V
ED1402B 150 225
ED1402C 202 318
ED1402D 290 450
ED1402E 410 810
V
BE
base-emitter voltage IC= 2 mA; VCE= 5 V; note 1 − 770 mV
C
c
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 5pF
f
T
transition frequency IC= 1 mA; VCE= 10 V; f = 100 MHz 100 − MHz
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