Philips bu2725dx_2 Datasheet

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand V

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
I
P
V
I
t

C
CM

Csat
s

CESM

tot
CEsat

Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A - 1.0 V
Collector saturation current f = 16 kHz 7.0 - A
Storage time I

= 7.0 A; f = 16kHz 5.8 6.5 µs

Csat

PINNING - SOT399 PIN CONFIGURATION SYMBOL

pulses up to 1700V.

CES

PIN DESCRIPTION

case

c

1 base
2 collector

b

3 emitter

case isolated

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
I

C

I

CM

I

B

I

BM

-I

-I
P
T
T

CESM

B(AV)
BM
tot
stg
j

Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 12 A
Base current peak value - 20 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value

1

Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

ESD LIMITING VALUES

Rbe

e

-9A

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

1 Turn-off current.

Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV

1.5 kΩ)

August 2002 1 Rev 2.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-hs

R

th j-hs

R

th j-a

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink

Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I
I

I
B
R
V
V
V
h
h

CES
CES

EBO

VEBO

EB
CEsat
BEsat
F

FE
FE

Collector cut-off current

Emitter cut-off current VEB = 7.5 V; IC = 0 A - 110 - mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V 70 Ω
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A - - 1.0 V
Base-emitter saturation voltage IC = 7.0 A; IB = 1.75 A 0.78 0.86 0.95 V
Diode forward voltage IF = 7 A 1.4 2.2 V
DC current gain IC = 1 A; VCE = 5 V - 19 -

2

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

IC = 7 A; VCE = 1 V 3.8 5.8 7.8

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (16 kHz line I
deflection circuit) VCC = 162 V; I

t

s

t

f

Turn-off storage time 5.8 6.5 µs
Turn-off fall time 0.6 0.8 µs

= 7.0 A; LC = 650 µH; Cfb = 18 nF;

Csat

-VBB = 4 V

= 1.5 A; LB = 2 µH;

B(end)

2 Measured with half sine-wave voltage (curve tracer).

August 2002 2 Rev 2.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

IC

IB

VCE

TRANSISTOR

DIODE

26us20us

64us

ICsat

t

IBend

t

t

Fig.1. Switching times waveforms (16 kHz).

ICsat

90 %

IC

10 %

IB

ts

IBend

tf

t

IBend

LB

D.U.T.

-VBB

Fig.3. Switching times test circuit.

hFE

100

VCE = 5 V

10

+ 150 v nominal
adjust for ICsat

Lc

Cfb

Rbe

BU2727D/DF

Ths = 25 C
Ths = 85 C

- IBM

Fig.2. Switching times definitions.

t

1

0.01 0.1 1 10 100
IC / A

Fig.4. DC current gain. hFE = f (IC)

Parameter T

(Low and high gain)

hs

August 2002 3 Rev 2.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

h

FE

100

10

1

0.01

VCE = 1 V

0.1 1 10 100

Ths = 25 °C

Ths = 85 °C

IC (A)

Fig.5. DC current gain. hFE = f (IC)

Parameter T

(Low and high gain)

V

10

0.1

0.01

(V)

CEsat

Ths = 85 °C
Ths = 25 °C

1

0.1 1 10 100

IC/IB = 12

hs

IC/IB = 5

IC (A)

Fig.6. Typical collector-emitter saturation voltage.

V

= f (IC); parameter IC/I

CEsat

B

V

(V)

BEsat

1

0.9

0.8

0.7

0.6
01234

IC = 6 A

4 A

Ths = 85 °C
Ths = 25 °C

IB (A)

Fig.7. Typical base-emitter saturation voltage.

V

= f (IB); parameter I

BEsat

ts/tf/ us

10

9
8
7
6
5
4
3
2
1
0

01234

C

BU2527AFX,DFX

IB / A

Fig.8. Limit storage and fall time.

ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz

4

August 2002 4 Rev 2.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.9. Normalised power dissipation.

PD% = 100⋅PD/PD 25˚C = f (Ths)

Zth / (K/W)

10

0.5

1

0.2

0.1

0.05

0.1

0.02

P

0.01

D = 0

0.001
1E-06 1E-04 1E-02 1E+00

D

t / s

Fig.10. Transient thermal impedance.

Zth

= f(t); parameter D = tp/T

j-hs

p

t

T

BU2525AF

t

p

D =

T

t

VCC

LC

IB1

-VBB

LB

T.U.T.

Fig.11. Test Circuit RBSOA.

VCC = 150 V; -VBB = 1 - 4 V;

LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;

CFB = 1 - 3 nF; I

IC / A

35

30

25

20

15

10

5

0

100 1000 1700

B(end)

VCE / V

= 0.8 - 4 A

BU2727A/AF/D/DF

Area where
fails occur

Fig.12. Reverse bias safe operating area. Tj ≤ T

VCL

CFB

jmax

August 2002 5 Rev 2.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

MECHANICAL DATA

Dimensions in mm
Net Mass: 5.88 g

4.5

16.0 max

10.0

0.7

3.3

5.8 max

3.0

27

max

22.5
max

18.1
min

5.45 5.45

Fig.13. SOT399; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

25

25.1

25.7

5.1

2.2 max

4.5

1.1

0.4 M
2

0.95 max

3.3

August 2002 6 Rev 2.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725DX

DEFINITIONS

DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS

STATUS

Objective data Development This data sheet contains data from the objective specification for

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2002

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

3

STATUS

4

product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product

Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

3 Please consult the most recently issued datasheet before initiating or completing a design.
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is

available on the Internet at URL http://www.semiconductors.philips.com.

August 2002 7 Rev 2.000