Philips BU2520D Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT93 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current 6 - A
Diode forward voltage IF = 6.0 A - 2.2 V
Fall time ICM = 6.0 A; I
= 1.0 A 0.35 0.5 µs
B(end)
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-6A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
November 1995 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A 100 - 300 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 50 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
DC current gain IC = 1.0 A; VCE = 5 V - - 23
Diode forward voltage IF = 6 A - - 2.2 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (16 kHz line ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit) I
Turn-off storage time 4.5 5.5 µs
Turn-off fall time 0.35 0.5 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 6 A; VCE = 5 V 5 7 10
= 1.0 A; LB = 5.3 µH; -VBB = 4 V;
B(end)
(-dIB/dt = 0.8 A / µs)
ICM
IBend
t
t
t
IC
IB
ts
IBend
VCE
TRANSISTOR
IC
IB
DIODE
26us20us
64us
Fig.1. Switching times waveforms (16 kHz). Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
ICM
90 %
10 %
tf
t
t
- IBM
November 1995 2 Rev 1.200
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