Philips BU2520AW Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current 6 - A
Fall time I
= 6.0 A; I
Csat
= 0.85 A 0.2 0.35 µs
B(end)
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
1
3
e
-6A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.1 V
DC current gain IC = 100 mA; VCE = 5 V - 13 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (32 kHz line I
deflection circuit) I
Turn-off storage time 3.0 4.0 µs
Turn-off fall time 0.2 0.35 µs
Switching times (16 kHz line I
deflection circuit) I
Turn-off storage time 4.5 5.5 µs
Turn-off fall time 0.35 0.5 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 6 A; VCE = 5 V 5 7 9.5
= 6.0 A; LC = 330 µH; Cfb = 9 nF;
Csat
= 0.85 A; LB = 3.45 µH;
B(end)
-VBB = 4 V; (-dIB/dt = 1.2 A/µs)
= 6.0 A; LC = 650 µH; Cfb = 19 nF;
Csat
= 1.0 A; LB = 5.3 µH; -VBB = 4 V;
B(end)
(-dIB/dt = 0.8 A / µs)
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520AW
30-60 Hz
IC / mA
250
200
100
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
sust.
CEO
+ 50v
ICsat
t
IBend
t
t
VCE
TRANSISTOR
IC
IB
DIODE
13us10us
32us
Fig.4. Switching times waveforms (32 kHz).
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
t
0
VCE / V
Fig.2. Oscilloscope display for V
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
min
VCEOsust
sust.
CEO
ICsat
IBend
t
t
t
Fig.3. Switching times waveforms (16 kHz).
Fig.5. Switching times definitions.
IBend
-VBB
LB
T.U.T.
Fig.6. Switching times test circuit
t
- IBM
+ 150 v nominal
adjust for ICsat
Lc
Cfb
(BU2520A).
September 1997 3 Rev 1.100
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