Philips BU2508D Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508D
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
V
I
V
t
C
CM
Csat
f
CESM
CEO
tot
CEsat
CEsat
F
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.29 A - 1.0 V
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 5.0 V
Collector saturation current 4.5 - A
Diode forward voltage IF = 4.5 A 1.6 2.0 V
Fall time ICM = 4.5 A; I
= 1.1 A 0.4 0.6 µs
B(end)
PINNING - SOT93 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
tab
1 base
2 collector
c
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
Rbe
e
-5A
1 Turn-off current.
December 1995 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508D
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
R
be
V
CEOsust
V
CEsat
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A 140 - 390 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 33 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A - - 5.0 V
IC = 4.5 A; IB = 1.29 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V
DC current gain IC = 1 A; VCE = 5 V 7 13 23
IC = 4.5 A; VCE = 1 V 4 5.5 7.5
Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line ICM = 4.5 A; I
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
= 1.1 A; LB = 6 µH;
B(end)
Turn-off storage time 5.0 6.0 µs
Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line ICM = 4.0 A; I
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
= 0.9 A; LB = 6 µH;
B(end)
Turn-off storage time 4.7 5.7 µs
Turn-off fall time 0.25 0.35 µs
2 Measured with half sine-wave voltage (curve tracer).
December 1995 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508D
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
90 %
IC
10 %
IB
ts
IBend
tf
Fig.2. Switching times definitions.
ICM
IBend
- IBM
ICM
h
FE
100
t
t
10
Tj = 25 C
Tj = 125 C
BU2508D
5V
1V
1
t
0.01 1
0.1 10
IC / A
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
VBESAT / V BU2508D
1.2
1.1
1
0.9
t
t
0.8
0.7
0.6
0.5
0.4
0.1 1 10
Tj = 25 C
Tj = 125 C
CE
IC/IB=
3
4
5
IC / A
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/I
B
VCESAT / V BU2508D
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10
Tj = 25 C
Tj = 125 C
IC/IB=
5
4
3
IC / A
VCEsat = f (IC); parameter IC/I
B
IBend
LB
D.U.T.
-VBB
Fig.3. Switching times test circuit
+ 150 v nominal
adjust for ICM
Rbe
1mH
12nF
.
Fig.6. Typical collector-emitter saturation voltage.
December 1995 3 Rev 1.200
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