Philips BU2508AF Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 1 V
Collector saturation current 4.5 - A
Fall time I
= 4.5 A; I
Csat
= 1.1 A 0.4 0.6 µs
B(end)
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
12
3
e
-5A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V
DC current gain IC = 100 mA; VCE = 5 V - 13 -
IC = 4.5 A; VCE = 1 V 4 5.5 7.0
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line I
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
= 4.5 A; I
Csat
= 1.1 A; LB = 6 µH;
B(end)
Turn-off storage time 5.0 6.0 µs
Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line I
= 4.0 A; I
Csat
= 0.9 A; LB = 6 µH;
B(end)
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
Turn-off storage time 4.7 5.7 µs
Turn-off fall time 0.25 0.35 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.500
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2508AF
30-60 Hz
IC / mA
250
200
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
t
t
100
0
VCE / V
Fig.2. Oscilloscope display for V
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.3. Switching times waveforms.
min
VCEOsust
CEOsust
ICsat
IBend
IBend
LB
D.U.T.
12nF
BY228
-VBB
.
t
t
t
Fig.5. Switching times test circuit
h
FE
100
10
1V
Tj = 25 C
Tj = 125 C
1
0.01 1
0.1 10
IC / A
.
5V
Fig.6. Typical DC current gain. hFE = f (IC)
parameter V
CE
September 1997 3 Rev 1.500
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