Philips BU2507DX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT399 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 4 A; IB = 0.8 A - 5.0 V
Collector saturation current f = 16kHz 4 - A
Diode forward voltage IF = 4 A 1.7 2.0 V
Fall time I
= 4 A; f = 16kHz 0.25 0.5 µs
Csat
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
Rbe
e
-5A
1 Turn-off current.
September 1997 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2507DX
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
R
be
V
CEsat
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - 160 - mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Base-emitter resistance VEB = 7.5 V - 45 - Ω
Collector-emitter saturation voltages IC = 4 A; IB = 0.8 A - 5 V
V
h
h
V
BEsat
FE
FE
F
Base-emitter saturation voltage IC = 4 A; IB = 0.8 A - - 1.1 V
DC current gain IC = 1 A; VCE = 5 V - 14 -
IC = 4 A; VCE = 5 V 5 7 9
Diode forward voltage IF = 4 A - 1.7 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
2 Measured with half sine-wave voltage (curve tracer).
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 68 - pF
Switching times (16 kHz line I
deflection circuit) -VBB = 4 V
= 4 A; I
Csat
= 0.7 A; LB = 6 µH;
B(end)
Turn-off storage time 5.0 6.0 µs
Turn-off fall time 0.25 0.5 µs
September 1997 2 Rev 1.200
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