Philips BU1706AX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1750 V
Collector-emitter voltage (open base) - 850 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - 1.0 V
Collector saturation current 1.5 - A
Fall time ICM = 1.5 A; I
= 0.3 A 0.25 0.6 µs
B(on)
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
-I
P
T
T
CESM
CEO
B(AV)
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1750 V
Collector-emitter voltage (open base) - 850 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Base current (DC) - 3 A
Base current peak value - 5 A
Reverse base current average over any 20ms period - 100 mA
Reverse base current peak value - 4 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Storage temperature -40 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
123
e
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-hs
th j-a
Junction to heatsink with heatsink compound - 4.0 K/W
Junction to ambient in free air 55 - K/W
April 1994 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Collector cut-off current
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = 1500 V - - 20 µA
VBE = 0 V; VCE = V
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Tj = 125 ˚C
Emitter cut-off current VEB = 12 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 750 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.0 V
Base-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.3 V
DC current gain IC = 5 mA; VCE = 10 V 8 - -
IC = 400 mA; VCE = 3 V 12 18 35
IC = 1.5 A; VCE = 1 V 5 7 -
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
Turn-on time 1.1 1.5 µs
Turn-off storage time 5 6.5 µs
Turn-off fall time 0.75 1.0 µs
Switching times (inductive load) I
t
s
t
f
Turn-off storage time 2.0 3.0 µs
Turn-off fall time 0.25 0.6 µs
Switching times (inductive load) I
t
s
t
f
Turn-off storage time 2.2 3.3 µs
Turn-off fall time 0.2 0.7 µs
= 1.5 A; I
Con
= 1.5 A; I
Con
= -I
Bon
Boff
= 0.3 A; LB = 1 µH;
Bon
-VBB = 5 V
= 1.5 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= 0.3 A; LB = 1 µH;
Bon
= 0.3 A
1 Measured with half sine-wave voltage (curve tracer).
April 1994 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1706AX
ICon
90 %
10 %
tf
IBon
30-60 Hz
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
90 %
IC
ton
IB
10 %
tr 30ns
-IBoff
ts
toff
Fig.4. Switching times waveforms with resistive load.
IC / mA
250
200
100
0
VCE / V
Fig.2. Oscilloscope display for V
VIM
0
tp
T
R
B
min
VCEOsust
VCC
R
L
T.U.T.
CEOsust
VCC
LC
IBon
-VBB
.
Fig.5. Test circuit inductive load.
LB
T.U.T.
VCC = 300 V; -VBE = 5 V; LB = 1 uH
VCC
LC
IBend
-VBB
LB
T.U.T.
VCL
CFB
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;
Fig.6. Test Circuit RBSOA.
LB = 1 µH
April 1994 3 Rev 1.000
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