Philips BU1706AX Datasheet

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1706AX

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

P

tot

V

CEsat

I

Csat

t

f

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 1750 V
Collector-emitter voltage (open base) - 850 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - 1.0 V
Collector saturation current 1.5 - A
Fall time ICM = 1.5 A; I

= 0.3 A 0.25 0.6 µs

B(on)

PIN DESCRIPTION

case

c

1 base
2 collector

b

3 emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

C

I

CM

I

B

I

BM

-I

-I
P
T
T

CESM
CEO

B(AV)
BM
tot
stg
j

Collector-emitter voltage peak value VBE = 0 V - 1750 V
Collector-emitter voltage (open base) - 850 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Base current (DC) - 3 A
Base current peak value - 5 A
Reverse base current average over any 20ms period - 100 mA
Reverse base current peak value - 4 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Storage temperature -40 150 ˚C
Junction temperature - 150 ˚C

THERMAL RESISTANCES

123

e

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R
R

th j-hs

th j-a

Junction to heatsink with heatsink compound - 4.0 K/W
Junction to ambient in free air 55 - K/W

April 1994 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1706AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

CES

I

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

h

FE

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

Collector cut-off current

1

VBE = 0 V; VCE = V
VBE = 0 V; VCE = 1500 V - - 20 µA
VBE = 0 V; VCE = V

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

Tj = 125 ˚C
Emitter cut-off current VEB = 12 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 750 - - V

L = 25 mH
Collector-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.0 V
Base-emitter saturation voltage IC = 1.5 A; IB = 0.3 A - - 1.3 V
DC current gain IC = 5 mA; VCE = 10 V 8 - -

IC = 400 mA; VCE = 3 V 12 18 35

IC = 1.5 A; VCE = 1 V 5 7 -

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) I

t

on

t

s

t

f

Turn-on time 1.1 1.5 µs
Turn-off storage time 5 6.5 µs
Turn-off fall time 0.75 1.0 µs

Switching times (inductive load) I

t

s

t

f

Turn-off storage time 2.0 3.0 µs
Turn-off fall time 0.25 0.6 µs

Switching times (inductive load) I

t

s

t

f

Turn-off storage time 2.2 3.3 µs
Turn-off fall time 0.2 0.7 µs

= 1.5 A; I

Con

= 1.5 A; I

Con

= -I

Bon

Boff

= 0.3 A; LB = 1 µH;

Bon

-VBB = 5 V

= 1.5 A; I

Con

-VBB = 5 V; Tj = 100 ˚C

= 0.3 A; LB = 1 µH;

Bon

= 0.3 A

1 Measured with half sine-wave voltage (curve tracer).

April 1994 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1706AX

ICon

90 %

10 %

tf

IBon

30-60 Hz

6V

300R

Fig.1. Test circuit for V

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

90 %

IC

ton

IB

10 %

tr 30ns

-IBoff

ts
toff

Fig.4. Switching times waveforms with resistive load.

IC / mA

250
200

100

0

VCE / V

Fig.2. Oscilloscope display for V

VIM
0

tp

T

R

B

min

VCEOsust

VCC

R

L

T.U.T.

CEOsust

VCC

LC

IBon

-VBB

.

Fig.5. Test circuit inductive load.

LB

T.U.T.

VCC = 300 V; -VBE = 5 V; LB = 1 uH

VCC

LC

IBend

-VBB

LB

T.U.T.

VCL

CFB

Fig.3. Test circuit resistive load. VIM = -6 to +8 V

VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

RB and RL calculated from I

Con

and I

requirements.

Bon

VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;

Fig.6. Test Circuit RBSOA.

LB = 1 µH

April 1994 3 Rev 1.000