Philips BU1508DX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 35 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 1.0 V
Collector saturation current 4.5 - A
Diode forward voltage IF = 4.5 A 1.6 - V
Fall time ICM = 4.5 A; I
= 1.1 A 0.4 0.6 µs
B(end)
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 35 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-5A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 3.6 K/W
Junction to ambient in free air 55 - K/W
September 1997 1 Rev 1.300
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1508DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A 140 - 390 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 33 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V
DC current gain IC = 1 A; VCE = 5 V - 13 -
IC = 4.5 A; VCE = 1 V 4 5.5 7.0
Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (line deflection ICM = 4.5 A; I
circuit). Fig.1, Fig.2 and Fig.3. -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
= 1.1 A; LB = 6 µH;
B(end)
Turn-off storage time 5.0 6.0 µs
Turn-off fall time 0.4 0.6 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.300
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1508DX
h
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
ICsat
t
IBend
t
t
FE
100
Tj = 25 C
Tj = 125 C
10
1
0.01 1
0.1 10
IC / A
1V
5V
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
CE
IC
IB
ts
IBend
Fig.2. Switching times definitions.
IBend
-VBB
LB
D.U.T.
Fig.3. Switching times test circuit
ICsat
90 %
10 %
tf
+ 150 v nominal
adjust for ICsat
Rbe
- IBM
1mH
12nF
VBESAT / V
1.2
1.1
1.0
0.9
t
t
0.8
0.7
0.6
0.5
0.4
0.1 1 10
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
IC / A
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/I
VCESAT / V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10
.
Fig.6. Typical collector-emitter saturation voltage.
Tj = 25 C
Tj = 125 C
IC/IB=
5
4
3
IC / A
VCEsat = f (IC); parameter IC/I
B
B
September 1997 3 Rev 1.300
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