Philips BU1506DX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Collector-emitter saturation voltage IC = 3.0 A; IB = 0.79 A - 5.0 V
Collector saturation current 3.0 - A
Diode forward voltage IF = 3.0 A 1.6 2.0 V
Fall time ICM = 3.0 A; I
= 0.67 A 0.25 0.5 µs
B(end)
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Base current (DC) - 3 A
Base current peak value - 8 A
Reverse base current average over any 20 ms period - 100 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 32 W
Storage temperature -40 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-8A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 4.0 K/W
Junction to ambient in free air 55 - K/W
September 1997 1 Rev 1.300
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1506DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A 90 - 180 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Base-emitter resistance VEB = 7.5 V - 55 - Ω
Collector-emitter saturation voltage IC = 3.0 A; IB = 0.79 A - - 5.0 V
Base-emitter saturation voltage IC = 3.0 A; IB = 0.79 A - - 1.1 V
DC current gain IC = 0.3 A; VCE = 5 V - 12 -
IC = 3.0 A; VCE = 5 V 3.8 5.5 7.5
Diode forward voltage IF = 3.0 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 47 - pF
Switching times (line deflection ICM = 3.0 A; LC = 1.35 mH;
circuit) CFB = 9.4 nF; I
LB = 8 µH; -VBB = 4 V;
B(end)
= 0.67 A;
(-dIB/dt = 0.45 A/µs)
Turn-off storage time 4.5 6.0 µs
Turn-off fall time 0.25 0.5 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.300
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU1506DX
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
90 %
IC
10 %
IB
ts
IBend
tf
Fig.2. Switching times definitions.
ICsat
IBend
- IBM
ICsat
t
t
h
FE
100
t
t
t
10
1
0.01 1
Tj = 25 C
Tj = 125 C
1V
IC / A
5V
100.1
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.1 1 10
Tj = 25 C
Tj = 125 C
CE
IC/IB =
3
4
5
IC / A
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/I
B
VCESAT / V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10
Tj = 25 C
Tj = 125 C
VCEsat = f (IC); parameter IC/I
IC/IB =
5
4
3
IC / A
B
IBend
LB
D.U.T.
-VBB
Fig.3. Switching times test circuit
+ 150 v nominal
adjust for ICsat
Rbe
Lc
Cfb
.
Fig.6. Typical collector-emitter saturation voltage.
September 1997 3 Rev 1.300
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