![](/html/d0/d044/d0447274f94116687bc2a8c307884144558f58d10993aed185b840c8bcb30983/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ242
PNP video transistor
Product specification
Supersedes data of 1995 Oct 09
File under Discrete Semiconductors, SC05
1996 Sep 04
![](/html/d0/d044/d0447274f94116687bc2a8c307884144558f58d10993aed185b840c8bcb30983/bg2.png)
Philips Semiconductors Product specification
PNP video transistor BFQ242
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
PNP silicon transistor encapsulated
in a 3-lead plastic SOT32 package.
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
handbook, halfpage
Top view
123
MBC077 - 1
Fig.1 Simplified outline SOT32.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
I
C
P
tot
f
T
C
re
T
j
collector-base voltage open emitter −−100 V
collector current (DC) −−100 mA
total power dissipation Tmb=25°C − 5W
transition frequency IC= −25 mA; VCE= −10 V 1 − GHz
feedback capacitance IC= 0; VCB= −10 V 1.7 − pF
junction temperature − 175 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter −−100 V
collector-emitter voltage RBE= 100 Ω−−95 V
emitter-base voltage open collector −−3V
collector current (DC) see Fig.2 −−100 mA
average collector current see Fig.2 −−100 mA
total power dissipation Tmb=25°C; see Fig.3 − 5W
storage temperature −65 +175 °C
junction temperature − 175 °C
1996 Sep 04 2