Philips BFQ236A, BFQ236 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ236; BFQ236A
NPN video transistors
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors Product specification
NPN video transistors BFQ236; BFQ236A
FEATURES
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
• Good thermal stability
• Gold metallization ensures
excellent reliability
• Surface mounting.
APPLICATIONS
• CRT amplifier buffer/driver in
high-resolution colour graphics
monitors.
DESCRIPTION
NPN video transistor in a SOT223
plastic package. PNP complements:
BFQ256 and BFQ256A.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
age
123
Top view
Fig.1 Simplified outline
(SOT223).
4
MSB002 - 1
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BFQ236 −−100 V
BFQ236A −−115 V
V
CER
collector-emitter voltage RBE= 100 Ω
BFQ236 −−95 V
BFQ236A −−110 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−300 mA
total power dissipation Ts≤ 115 °C; note 1 −−2W
DC current gain IC= 50 mA; VCE= 10 V; see Fig.4 20 35 −
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz
BFQ236 1 1.4 − GHz
BFQ236A 0.8 1.2 − GHz
Note
is the temperature at the soldering point of the collector lead.
1. T
s
1997 Oct 02 2
Philips Semiconductors Product specification
NPN video transistors BFQ236; BFQ236A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter
BFQ236 − 100 V
BFQ236A − 115 V
collector-emitter voltage open base
BFQ236 − 65 V
BFQ236A − 95 V
collector-emitter voltage RBE= 100 Ω
BFQ236 − 95 V
BFQ236A − 110 V
emitter-base voltage open collector − 3V
collector current (DC) − 300 mA
total power dissipation Ts≤ 115 °C; note 1; see Fig.3 − 2W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector lead.
1. T
s
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts=115°C; P
=2W;
tot
30 K/W
notes 1 and 2
Notes
1. Ts is the temperature at the soldering point of the collector lead.
2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).
1997 Oct 02 3
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