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DISCRETE SEMICONDUCTORS
DATA SH EET
M3D066
BFQ235A
NPN video transistor
Product specification
Supersedes data of 1997 Oct 02
1998 Oct 06
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Discrete Semiconductors Product specification
NPN video transistor BFQ235A
FEATURES
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
• Good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN video transistor in a SOT128B
(TO-202) plastic package.
PNP complement: BFQ255A.
PINNING
PIN DESCRIPTION
page
1 emitter
APPLICATIONS
• CRT amplifier buffer/driver in
2 collector
3 base
high-resolution colour graphics
monitors.
123
MGA323
Fig.1 Simplified outline
(SOT128B; TO-202).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
collector-base voltage open emitter −−115 V
collector-emitter voltage RBE= 100 Ω−−110 V
collector current (DC) −−300 mA
total power dissipation Ts≤ 100 °C; note 1 −−3W
DC current gain IC= 50 mA; VCE= 10 V; T
transition frequency IC= 50 mA; VCE= 10 V; T
=25°C20 35 −
amb
=25°C 0.8 1.2 − GHz
amb
Note
is the temperature at the soldering point of the collector pin.
1. T
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 115 V
collector-emitter voltage open base − 95 V
collector-emitter voltage RBE= 100 Ω−110 V
emitter-base voltage open collector − 3V
collector current (DC) − 300 mA
total power dissipation Ts≤ 100 °C; note 1; see Fig.3 − 3W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1998 Oct 06 2
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Discrete Semiconductors Product specification
NPN video transistor BFQ235A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
f
T
C
cb
thermal resistance from junction to soldering point Ts≤ 100 °C; note 1 25 K/W
is the temperature at the soldering point of the collector pin.
collector-base breakdown voltage IC= 0.1 mA; IE=0 115 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 95 −−V
collector-emitter breakdown voltage IC= 10 mA; RBE= 100 Ω 110 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector cut-off current IB= 0; VCE=50V −−100 µA
collector cut-off current IE= 0; VCB=50V −−20 µA
DC current gain IC= 50 mA; VCE=10V; T
amb
=25°C;
20 35 −
see Fig.4
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz;
T
=25°C; see Fig.6
amb
collector-base capacitance IC= 0; VCB= 10 V; f = 1 MHz;
T
=25°C; see Fig.5
amb
0.8 1.2 − GHz
− 2 − pF
V
CEO
MBB887
80
(V)
400
handbook, halfpage
I
C
(mA)
300
200
100
0
0
20 40 60
Fig.2 DC SOAR.
1998 Oct 06 3
handbook, halfpage
4
P
tot
(W)
3
2
1
0
0 50 100 200
MBB888
150
Ts (oC)
Fig.3 Power derating curve.