Philips BFQ231A Technical data
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DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ231; BFQ231A
NPN video transistors
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors Product specification
NPN video transistors BFQ231; BFQ231A
FEATURES
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
DESCRIPTION
NPN video transistor in a SOT54
(TO-92) plastic package.
PNP complements: BFQ251 and
BFQ251A.
age
1
2
3
• Good thermal stability
• Gold metallization ensures
excellent reliability.
PINNING
MSB033
PIN DESCRIPTION
APPLICATIONS
• Buffer/driver in high-resolution
colour graphics monitors.
1 base
2 collector
3 emitter
Fig.1 Simplified outline
(SOT54; TO-92).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BFQ231 −−100 V
BFQ231A −−115 V
V
CER
collector-emitter voltage RBE= 100 Ω
BFQ231 −−95 V
BFQ231A −−110 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−300 mA
total power dissipation Ts≤ 65 °C; note 1 −−1W
DC current gain IC= 50 mA; VCE= 10 V 20 35 −
transition frequency IC= 50 mA; VCE= 10 V; T
amb
=25°C
BFQ231 1 1.4 − GHz
BFQ231A 0.8 1.2 − GHz
Note
is the temperature at the soldering point of the collector pin, 4 mm from the body.
1. T
s
1997 Oct 02 2
Philips Semiconductors Product specification
NPN video transistors BFQ231; BFQ231A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter
BFQ231 − 100 V
BFQ231A − 115 V
collector-emitter voltage open base
BFQ231 − 65 V
BFQ231A − 95 V
collector-emitter voltage RBE= 100 Ω
BFQ231 − 95 V
BFQ231A − 110 V
emitter-base voltage open collector − 3V
collector current (DC) − 300 mA
total power dissipation Ts≤ 65 °C; notes 1 and 2; see Fig.3 − 1W
storage temperature −65 +150 °C
junction temperature − 150 °C
Notes
is the temperature at the soldering point of the collector pin, 4 mm from the body.
1. T
s
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
R
th j-s
th j-a
th s-a
thermal resistance from junction to soldering point note 1 85 K/W
thermal resistance from junction to ambient 185 K/W
thermal resistance from soldering point to ambient 100 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 02 3
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