Philips BFQ226 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ226

NPN video transistor

Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05

1996 Sep 04

Philips Semiconductors Product specification

NPN video transistor BFQ226

APPLICATIONS

• Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.

DESCRIPTION

NPN silicon transistor encapsulated
in a 4-lead plastic SOT223 package.

handbook, halfpage

4

PINNING

PIN DESCRIPTION

123

Top view

MSB002 - 1

1 emitter
2 base
3 emitter

Fig.1 Simplified outline SOT223.

4 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

I

C

P

tot

f

T

C

re

T

j

collector-base voltage open emitter − 100 V
collector current (DC) − 100 mA
total power dissipation up to Ts=60°C − 3W
transition frequency IC= 25 mA; VCE=10V 1 − GHz
feedback capacitance IC= 0; VCB= 10 V 1.7 − pF
junction temperature − 175 °C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-base voltage open emitter − 100 V
collector-emitter voltage RBE= 100 Ω−95 V
emitter-base voltage open collector − 3V
collector current (DC) see Fig.2 − 100 mA
average collector current see Fig.2 − 100 mA
total power dissipation up to Ts=60°C; note 1; see Fig.3 − 3W
storage temperature −65 +175 °C
junction temperature − 175 °C

Note

1. T

is the temperature at the soldering point of the collector pin.

s

1996 Sep 04 2