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DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ226
NPN video transistor
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
1996 Sep 04
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Philips Semiconductors Product specification
NPN video transistor BFQ226
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 4-lead plastic SOT223 package.
handbook, halfpage
4
PINNING
PIN DESCRIPTION
123
Top view
MSB002 - 1
1 emitter
2 base
3 emitter
Fig.1 Simplified outline SOT223.
4 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
I
C
P
tot
f
T
C
re
T
j
collector-base voltage open emitter − 100 V
collector current (DC) − 100 mA
total power dissipation up to Ts=60°C − 3W
transition frequency IC= 25 mA; VCE=10V 1 − GHz
feedback capacitance IC= 0; VCB= 10 V 1.7 − pF
junction temperature − 175 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter − 100 V
collector-emitter voltage RBE= 100 Ω−95 V
emitter-base voltage open collector − 3V
collector current (DC) see Fig.2 − 100 mA
average collector current see Fig.2 − 100 mA
total power dissipation up to Ts=60°C; note 1; see Fig.3 − 3W
storage temperature −65 +175 °C
junction temperature − 175 °C
Note
1. T
is the temperature at the soldering point of the collector pin.
s
1996 Sep 04 2