Philips BFQ225 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ225

NPN video transistor

Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05

1996 Sep 04

Philips Semiconductors Product specification

NPN video transistor BFQ225

APPLICATIONS

• Primarily intended for cascode

handbook, halfpage

output and buffer stages in high
resolution colour monitors.

DESCRIPTION

NPN silicon transistor encapsulated
in a 3-lead plastic SOT128B package.

PINNING

PIN DESCRIPTION

1 emitter
2 collector

123

MGA323

3 base

Fig.1 Simplified outline SOT128B.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
P
f
C
T

CBO

C

tot

T

re

j

collector-base voltage open emitter − 100 V
collector current (DC) − 100 mA
total power dissipation Tmb=25°C − 3.75 W
transition frequency IC= 25 mA; VCE=10V 1 − GHz
feedback capacitance IC= 0; VCB= 10 V 1.7 − pF
junction temperature − 175 °C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-base voltage open emitter − 100 V
collector-emitter voltage RBE= 100 Ω−95 V
emitter-base voltage open collector − 3V
collector current (DC) see Fig.2 − 100 mA
average collector current see Fig.2 − 100 mA
total power dissipation Tmb=25°C; see Fig.3 − 3.75 W
storage temperature −65 +175 °C
junction temperature − 175 °C

1996 Sep 04 2