Philips BFQ222 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ222
NPN video transistor
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
1996 Sep 04
Philips Semiconductors Product specification
NPN video transistor BFQ222
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
handbook, halfpage
resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 3-lead plastic SOT32 package.
PINNING
PIN DESCRIPTION
Top view
123
MBC077 - 1
1 emitter
2 collector
3 base
Fig.1 Simplified outline SOT32.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
I
C
P
tot
f
T
C
re
T
j
collector-base voltage open emitter − 100 V
collector current (DC) − 100 mA
total power dissipation Tmb=25°C − 5W
transition frequency IC= 25 mA; VCE=10V 1 − GHz
feedback capacitance IC= 0; VCB= 10 V 1.7 − pF
junction temperature − 175 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter − 100 V
collector-emitter voltage RBE= 100 Ω−95 V
emitter-base voltage open collector − 3V
collector current (DC) see Fig.2 − 100 mA
average collector current see Fig.2 − 100 mA
total power dissipation Tmb=25°C; see Fig.3 − 5W
storage temperature −65 +175 °C
junction temperature − 175 °C
1996 Sep 04 2
Loading...