Philips BFQ221 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ221

NPN video transistor

Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05

1996 Sep 04

Philips Semiconductors Product specification

NPN video transistor BFQ221

APPLICATIONS

• Primarily intended for buffer stages
in high resolution colour monitors.

PINNING

PIN DESCRIPTION

1 base

1

2

3

2 collector

DESCRIPTION

3 emitter

MSB033

NPN silicon transistor encapsulated
in a 3-lead plastic SOT54 package.

Fig.1 Simplified outline SOT54.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

V
I
P
f
C
T

CBO

C

tot

T

re

j

collector-base voltage open emitter − 100 V
collector current (DC) − 100 mA
total power dissipation up to Ts=60°C − 1.15 W
transition frequency IC= 25 mA; VCE=10V 1 − GHz
feedback capacitance IC= 0; VCB=10V 1.7 − pF
junction temperature − 150 °C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V

CBO

V

CER

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-base voltage open emitter − 100 V
collector-emitter voltage RBE= 100 Ω−95 V
emitter-base voltage open collector − 3V
collector current (DC) see Fig.2 − 100 mA
average collector current see Fig.2 − 100 mA
total power dissipation up to Ts=60°C; note 1; see Fig.3 − 1.15 W
storage temperature −65 +150 °C
junction temperature − 150 °C

Note

is the temperature at the soldering point of the collector pin.

1. T

s

1996 Sep 04 2