Philips BFQ19 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ19
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFQ19
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for use in UHF and
microwave amplifiers such as in aerial
amplifiers, radar systems,
PINNING
PIN DESCRIPTION
Code: FB
1 emitter
2 collector
3 base
age
oscilloscopes, spectrum analyzers
etc.
The transistor features very low
intermodulation distortion and high
123
Bottom view
MBK514
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and
Fig.1 SOT89.
low noise up to high frequencies.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CEO
I
C
P
tot
f
T
collector-emitter voltage open base − 15 V
DC collector current − 100 mA
total power dissipation up to Ts= 145 °C (note 1) − 1W
transition frequency Ic= 50 mA; VCE= 10 V; f = 500 MHz;
5.5 − GHz
Tj=25°C
C
re
F noise figure I
feedback capacitance Ic= 10 mA; VCE= 10 V; f = 1 MHz;
T
=25°C
amb
= 50 mA; VCE= 10 V; Zs= opt.;
c
f = 500 MHz; T
amb
=25°C
1.3 − pF
3.3 − dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3.3 V
DC collector current − 100 mA
peak collector current f > 1 MHz − 150 mA
total power dissipation up to Ts= 145 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
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