Philips bfq18a DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ18A

NPN 4 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ18A

DESCRIPTION

NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.

PINNING

PIN DESCRIPTION

Code: FF
1 emitter
2 collector

age

3 base

123

Bottom view

MBK514

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

f

T

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
DC collector current − 150 mA
total power dissipation up to Ts = 155 °C (note 1) − 1W
transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz;

4 − GHz

Tj = 25 °C

C

re

d

im

feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz 1.2 − pF
intermodulation distortion IC= 80 mA; VCE= 10 V; RL=75Ω;

−−60 dB
Vo= 700 mV; measured at
f

= 793.25 MHz

(p+q-r)

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
total power dissipation up to Ts= 155 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 175 °C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

September 1995 2