Philips bfq18a DATASHEETS

DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ18A
NPN 4 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14
September 1995
NPN 4 GHz wideband transistor BFQ18A

DESCRIPTION

NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes.

PINNING

PIN DESCRIPTION
Code: FF 1 emitter 2 collector
age
3 base
123
Bottom view
MBK514
Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
collector-base voltage open emitter 25 V collector-emitter voltage open base 18 V DC collector current 150 mA total power dissipation up to Ts = 155 °C (note 1) 1W transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz;
4 GHz
Tj = 25 °C
C
re
d
im
feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz 1.2 pF intermodulation distortion IC= 80 mA; VCE= 10 V; RL=75Ω;
−−60 dB Vo= 700 mV; measured at f
= 793.25 MHz
(p+q-r)

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter 25 V collector-emitter voltage open base 18 V emitter-base voltage open collector 2V DC collector current 150 mA total power dissipation up to Ts= 155 °C (note 1) 1W storage temperature 65 150 °C junction temperature 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
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