DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ18A
NPN 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ18A
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN DESCRIPTION
Code: FF
1 emitter
2 collector
age
3 base
123
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
DC collector current − 150 mA
total power dissipation up to Ts = 155 °C (note 1) − 1W
transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz;
4 − GHz
Tj = 25 °C
C
re
d
im
feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz 1.2 − pF
intermodulation distortion IC= 80 mA; VCE= 10 V; RL=75Ω;
−−60 dB
Vo= 700 mV; measured at
f
= 793.25 MHz
(p+q-r)
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
total power dissipation up to Ts= 155 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2