Philips BFQ17 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ17
NPN 1 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFQ17
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. The
transistor has extremely good
intermodulation properties and a high
power gain.
PINNING
PIN DESCRIPTION
Code: FA
1 emitter
2 collector
3 base
age
123
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
f
T
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 25 V
peak collector current − 300 mA
total power dissipation up to Ts = 145 °C (note 1) − 1W
transition frequency IC = 150 mA; VCE = 15 V; f = 500 MHz;
1.5 − GHz
Tj = 25 °C
C
re
feedback capacitance IC = 10 mA; VCE = 15 V; f = 1 MHz;
= 25 °C
T
amb
1.9 − pF
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-base voltage open emitter − 40 V
collector-emitter voltage RBE≤ 50 Ω−40 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
peak collector current f > 1 MHz − 300 mA
total power dissipation up to Ts= 145 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
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