Philips BFQ166 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ166
NPN video transistor
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors Product specification
NPN video transistor BFQ166
FEATURES
•Low output capacitance
• High gain bandwidth
DESCRIPTION
NPN video transistor in a SOT223
plastic package.
age
4
• Good thermal stability
• Gold metallization ensures
excellent reliability
• High current applicability
• Surface mounting.
APPLICATIONS
• Video amplifier cascode driver in
high-resolution colour graphics
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
123
Top view
MSB002 - 1
Fig.1 Simplified outline
(SOT223).
monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE= 100 Ω−−19 V
collector current (DC) −−500 mA
total power dissipation Ts≤ 105 °C; note 1 −−2W
DC current gain IC= 300 mA; VCE= 5 V; see Fig.4 50 60 −
transition frequency IC= 300 mA; VCE= 5 V; f = 100 MHz;
T
=25°C
amb
1 −−GHz
Note
is the temperature at the soldering point of the collector lead.
1. T
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
collector-emitter voltage RBE= 100 Ω−19 V
emitter-base voltage open collector − 3V
collector current (DC) − 500 mA
total power dissipation Ts≤ 105 °C; note 1; see Fig.3 − 2W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector lead.
1. T
s
1997 Oct 02 2
Philips Semiconductors Product specification
NPN video transistor BFQ166
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts= 105 °C; P
notes 1 and 2
Notes
is the temperature at the soldering point of the collector lead.
1. T
s
2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
I
CES
h
FE
C
c
C
cb
collector-base breakdown voltage IC= 5 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; RBE= 100 Ω 19 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 10 −−V
collector-emitter cut-off current VCE= 10 V; VBE=0 −−100 µA
DC current gain IC= 300 mA; VCE= 5 V; see Fig.4 50 60 −
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4.5 − pF
collector-base capacitance IC=ic= 0; VCB= 5 V; f = 1 MHz;
see Fig.6
f
T
transition frequency IC= 300 mA; VCE=5V;
f = 100 MHz; T
amb
=25°C;
see Fig.5
=2W;
tot
35 K/W
− 3.2 − pF
1 −−GHz
1997 Oct 02 3
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