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DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ166
NPN video transistor
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
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Philips Semiconductors Product specification
NPN video transistor BFQ166
FEATURES
•Low output capacitance
• High gain bandwidth
DESCRIPTION
NPN video transistor in a SOT223
plastic package.
age
4
• Good thermal stability
• Gold metallization ensures
excellent reliability
• High current applicability
• Surface mounting.
APPLICATIONS
• Video amplifier cascode driver in
high-resolution colour graphics
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
123
Top view
MSB002 - 1
Fig.1 Simplified outline
(SOT223).
monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE= 100 Ω−−19 V
collector current (DC) −−500 mA
total power dissipation Ts≤ 105 °C; note 1 −−2W
DC current gain IC= 300 mA; VCE= 5 V; see Fig.4 50 60 −
transition frequency IC= 300 mA; VCE= 5 V; f = 100 MHz;
T
=25°C
amb
1 −−GHz
Note
is the temperature at the soldering point of the collector lead.
1. T
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
collector-emitter voltage RBE= 100 Ω−19 V
emitter-base voltage open collector − 3V
collector current (DC) − 500 mA
total power dissipation Ts≤ 105 °C; note 1; see Fig.3 − 2W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector lead.
1. T
s
1997 Oct 02 2
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Philips Semiconductors Product specification
NPN video transistor BFQ166
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts= 105 °C; P
notes 1 and 2
Notes
is the temperature at the soldering point of the collector lead.
1. T
s
2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
I
CES
h
FE
C
c
C
cb
collector-base breakdown voltage IC= 5 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; RBE= 100 Ω 19 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 10 −−V
collector-emitter cut-off current VCE= 10 V; VBE=0 −−100 µA
DC current gain IC= 300 mA; VCE= 5 V; see Fig.4 50 60 −
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4.5 − pF
collector-base capacitance IC=ic= 0; VCB= 5 V; f = 1 MHz;
see Fig.6
f
T
transition frequency IC= 300 mA; VCE=5V;
f = 100 MHz; T
amb
=25°C;
see Fig.5
=2W;
tot
35 K/W
− 3.2 − pF
1 −−GHz
1997 Oct 02 3