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DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ162
NPN video transistor
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
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Philips Semiconductors Product specification
NPN video transistor BFQ162
FEATURES
• Low output capacitance
• Good thermal stability
DESCRIPTION
NPN video transistor in a SOT32
(TO-126) package.
alfpage
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
APPLICATIONS
• Pre-stage driver in high-resolution
colour graphics monitors.
1 emitter
2 collector
3 base
Top view
123
MBC077 - 1
Fig.1 Simplified outline
(SOT32; TO-126).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE= 100 Ω−−19 V
collector current (DC) −−500 mA
total power dissipation Ts≤ 115 °C; note 1 −−3W
DC current gain IC= 300 mA; VCE=5V; T
transition frequency IC= 300 mA; VCE= 5 V; f = 100 MHz;
T
=25°C
amb
=25°C50 60 −
amb
1 −−GHz
Note
is the temperature at the soldering point of the collector pin.
1. T
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
collector-emitter voltage RBE= 100 Ω−19 V
emitter-base voltage open collector − 3V
collector current (DC) − 500 mA
total power dissipation Ts≤ 115 °C; note 1; see Fig.3 − 3W
storage temperature −65 +175 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 02 2
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Philips Semiconductors Product specification
NPN video transistor BFQ162
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
f
T
C
cb
C
c
thermal resistance from junction to soldering point Ts≤ 115 °C; note 1 20 K/W
is the temperature at the soldering point of the collector pin.
collector-base breakdown voltage IC= 5 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 10 −−V
collector-emitter breakdown voltage IC= 10 mA; RBE= 100 Ω 19 −−V
emitter-base breakdown voltage IE= 1 mA; IC=0 3 −−V
collector-emitter cut-off current VBE=0V; VCE=10V −−100 µA
DC current gain IC= 300 mA; VCE=5V;
T
=25°C; see Fig.4
amb
I
= 100 mA; VCE=5V;
C
T
=25°C; see Fig.4
amb
transition frequency IC= 300 mA; VCE=5V;
f = 100 MHz; T
amb
=25°C;
50 60 −
40 50 −
1 −−GHz
see Fig.6
collector-base capacitance IC=ic= 0; VCB= 5 V; f = 1 MHz;
T
=25°C; see Fig.5
amb
− 4.2 − pF
collector capacitance IE=ie= 0; VCB= 5 V; f = 1 MHz − 5.8 − pF
1997 Oct 02 3