Philips BFQ161 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ161
NPN video transistor
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors Product specification
NPN video transistor BFQ161
FEATURES
• Low output capacitance
• High gain bandwidth
DESCRIPTION
NPN video transistor in a SOT54
(TO-92) plastic package.
age
1
2
3
• High current applicability
• Good thermal stability
• Gold metallization ensures
excellent reliability.
APPLICATIONS
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
MSB033
Fig.1 Simplified outline
(SOT54; TO-92).
• Pre-stage driver in high resolution
colour graphics monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE= 100 Ω−19 V
collector current (DC) − 500 mA
total power dissipation Ts≤ 75 °C; note 1 − 1W
DC current gain IC= 300 mA; VCE=5V 25 −
transition frequency IC= 300 mA; VCE=5V; T
=25°C1−GHz
amb
junction temperature − 150 °C
Note
1. T
is the temperature at the soldering point of the collector pin, 4 mm from the body.
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
collector-emitter voltage RBE= 100 Ω−19 V
emitter-base voltage open collector − 3V
collector current (DC) − 500 mA
total power dissipation Ts≤ 75 °C; notes 1 and 2; see Fig.3 − 1W
storage temperature range −65 +150 °C
junction temperature − 150 °C
Notes
is the temperature at the soldering point of the collector pin, 4 mm from the body.
1. T
s
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.
1997 Oct 02 2
Philips Semiconductors Product specification
NPN video transistor BFQ161
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
R
th j-a
R
th s-a
Note
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
cb
C
c
f
T
thermal resistance from junction to soldering point note 1 75 K/W
thermal resistance from junction to ambient 175 K/W
thermal resistance from soldering point to ambient 100 K/W
is the temperature at the soldering point of the collector pin, 4 mm from the body.
collector-base breakdown voltage IC= 5 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 10 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector-emitter cut-off current IB= 0; VCE=10V −−100 µA
DC current gain IC= 300 mA; VCE=5V;
T
=25°C; see Fig.4
amb
I
= 100 mA; VCE=5V;
C
T
=25°C; see Fig.4
amb
collector-base capacitance IC= 0; VCB= 5 V; f = 1 MHz;
25 −−
40 50 −
− 4.3 − pF
see Fig.5
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 6 − pF
transition frequency IC= 300 mA; VCE= 5 V; see Fig.6 1 −−GHz
1997 Oct 02 3
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