Philips BFQ149 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ149
PNP 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFQ149
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analyzers, etc.,
PINNING
PIN DESCRIPTION
Code: FG
1 emitter
2 collector
3 base
page
using SMD technology.
123
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEO
I
C
P
tot
h
FE
f
T
collector-emitter voltage open base −−−15 V
DC collector current −−−100 mA
total power dissipation up to Ts = 135 °C (note 1) −−1W
DC current gain IC = −70 mA; VCE = −10 V; Tj = 25 °C20 50 −
transition frequency IC = −75 mA; VCE = −10 V;
45−GHz
f = 500 MHz; Tj = 25 °C
G
UM
maximum unilateral power gain IC = −50 mA; VCE = −10 V;
F noise figure I
f = 500 MHz; T
= −50 mA; VCE = −10 V;
C
amb
= 25 °C
− 12 − dB
− 3.75 − dB
Rs=60Ω; f = 500 MHz;
T
= 25 °C
amb
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
emitter-base voltage open collector −−3V
DC collector current −−100 mA
peak collector current f > 1 MHz −−150 mA
total power dissipation up to Ts= 135 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 150 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
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