Philips BFQ136 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ136
NPN 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ136
DESCRIPTION
NPN transistor in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
age
4
31
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features
extremely high output voltage
Top view
2
MBK187
capabilities.
It is primarily intended for final stages
Fig.1 SOT122A.
in UHF amplifiers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CEO
I
C
P
tot
f
T
collector-emitter voltage open base − 18 V
DC collector current − 600 mA
total power dissipation up to Tc= 100 °C − 9W
transition frequency IC= 500 mA; VCE= 15 V; f = 500 MHz;
4.0 − GHz
Tj=25°C
G
UM
V
o
maximum unilateral power gain IC= 500 mA; VCE= 15 V; f = 800 MHz;
T
=25°C
amb
output voltage Ic= 500 mA; VCE= 15 V;
12.5 − dB
2.5 − V
dim= −60 dB; RL=75Ω;
f
= 793.25 MHz; T
(p+q−r)
amb
=25°C
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995 2
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ136
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-c
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 600 mA
total power dissipation up to Tc= 100 °C − 9W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to case 11 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
C
C
C
C
f
T
FE
c
e
re
cs
collector cut-off current IE= 0; VCB= 15 V −−75 µA
DC current gain IC= 500 mA; VCE= 15 V 25 75 −
collector capacitance IE=ie= 0; VCB= 15 V; f = 1 MHz − 7.0 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 40 − pF
feedback capacitance IC= 0; VCE= 15 V; f = 1 MHz − 4.0 − pF
collector-stud capacitance note 1 − 0.8 − pF
transition frequency IC= 500 mA; VCE= 15 V;
− 4.0 − GHz
f = 500 MHz
G
UM
V
o
maximum unilateral power gain
(note 2)
IC= 500 mA; VCE= 15 V;
f = 800 MHz; T
amb
=25°C
− 12.5 − dB
output voltage (see Fig.2) note 3 − 2.5 − V
Notes
1. Measured with emitter and base grounded.
2. G
is the maximum unilateral power gain, assuming S12is zero and
UM
G
UM
--------------------------------------------------------------
10 log
1S
–
2
S
21
2
1S
–
11
22
dB.=
2
3. dim= −60 dB; IC= 500 mA; VCE= 15 V; RL=75Ω; T
amb
Vp=Voat dim= −60 dB; fp= 795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
Vr=Vo−6 dB; fr= 805.25 MHz;
measured at f
= 793.25 MHz.
(p+q−r)
September 1995 3
=25°C;
Loading...