Philips BFG97 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG97
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG97
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It features excellent output voltage
capabilities, and is primarily intended
for use in MATV applications.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
e
4
PNP complement is the BFG31.
123
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
o
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
DC collector current −−100 mA
total power dissipation up to Ts= 125 °C (note 1) −−1W
DC current gain IC= 70 mA; VCE= 10 V; Tj=25°C25 80 −
transition frequency IC= 70 mA; VCE= 10 V;
f = 500 MHz; T
amb
=25°C
maximum unilateral power gain IC= 70 mA; VCE= 10 V;
f = 500 MHz; T
= 70 mA; VCE= 10 V;
I
C
f = 800 MHz; T
amb
amb
=25°C
=25°C
output voltage IC= 70 mA; VCE= 10 V;
d
−60 dB; RL=75Ω;
im =
f
= 793.25 MHz; T
(p+q−r)
amb
=25°C
− 5.5 − GHz
− 16 − dB
− 12 − dB
− 700 − mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
DC collector current − 100 mA
total power dissipation up to Ts= 125 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG97
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
Note
1. T
is the temperature at the soldering point of the collector tab.
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
V
o
d
2
thermal resistance from junction to
up to Ts= 125 °C (note 1) 50 K/W
soldering point
collector cut-off current IE= 0; VCB= 10 V −−100 nA
DC current gain IC= 70 mA; VCE= 10 V 25 80 −
transition frequency IC= 70 mA; VCE= 10 V;
f = 500 MHz; T
amb
=25°C
− 5.5 − GHz
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 1.5 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 6.5 − pF
feedback capacitance IC= 0; VCE= 10 V; f = 1 MHz − 1 − pF
maximum unilateral power gain
(note 1)
IC= 70 mA; VCE= 10 V;
f = 500 MHz; T
I
= 70 mA; VCE= 10 V;
C
f = 800 MHz; T
amb
amb
=25°C
=25°C
− 16 − dB
− 12 − dB
output voltage note 2 − 750 − mV
note 3 − 700 − mV
second order intermodulation
distortion
note 4 −−56 − dB
note 5 −−53 − dB
Notes
1. G
2. d
is the maximum unilateral power gain, assuming S12is zero and
UM
G
UM
= −60 dB (DIN 45004B); IC= 70 mA; VCE= 10 V; RL=75Ω; T
im
--------------------------------------------------------------
10 log
1S
S
2
–
11
2
21
1S
–
Vp=Voat dim= −60 dB;
Vq=Vo−6 dB; fp= 445.25 MHz;
Vr=Vo−6 dB; fq= 453.25 MHz; fr= 455.25 MHz;
measured at f
= 443.25 MHz.
(p+q−r)
3. dim= −60 dB (DIN 45004B); IC= 70 mA; VCE= 10 V; RL=75Ω; T
Vp=Voat dim= −60 dB;
Vq=Vo−6 dB; fp= 795.25 MHz;
Vr=Vo−6 dB; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f
4. IC= 70 mA; VCE= 10 V; RL=75Ω; T
Vp=Vq=Vo= 50 dBmV; f
5. IC= 70 mA; VCE= 10 V; RL=75Ω; T
Vp=Vq=Vo= 50 dBmV; f
= 793.25 MHz.
(p+q−r)
=25°C;
amb
= 450 MHz; fp= 50 MHz; fq= 400 MHz.
(p+q)
=25°C;
amb
= 810 MHz; fp= 250 MHz; fq= 560 MHz.
(p+q)
September 1995 3
22
amb
amb
dB.=
2
=25°C
=25°C
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG97
handbook, full pagewidth
V
BB
input
75 Ω
C3
C2
C4
L2
L5
R1
L1C1
L3
R2
DUT
C5
R3 R4
L4
C6
MBB807
V
CC
C7
C8L6
output
75 Ω
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C2, C3, C7, C8 multilayer ceramic
10 nF 2222 590 08627
capacitor
C1, C4, C6 multilayer ceramic
1.2 pF 2222 851 12128
capacitor
C5 (note 1) miniature ceramic plate
10 nF 2222 629 08103
capacitor
L1 (note 1) 0.5 turns 0.4 mm copper
int. dia. 3 mm
wire
L2 microstripline 75 Ω length 14 mm; width 2.5 mm
L3 microstripline 75 Ω length 8 mm; width 2.5 mm
L4, L5 (note 1) 1.5 turns 0.4 mm copper
wire
int. dia. 3 mm;
winding pitch 1 mm
L6 microstripline 75 Ω length 19 mm; width 2.5 mm
L7 Ferroxcube choke 5 µH 3122 108 20153
R1 metal film resistor 10 kΩ 2322 180 73103
R2 (note 1) metal film resistor 220 Ω 2322 180 73221
R3, R4 metal film resistor 30 Ω 2322 180 73309
Notes
The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (ε
thickness of copper sheet 2 × 35 µm.
1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB.
September 1995 4
= 2.2); thickness1⁄16 inch;
r
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG97
handbook, full pagewidth
handbook, full pagewidth
75
input
V
BB
C3
R1
C2
Ω
L1
L2
C1
R3
L3
C4
R4
R2
L4
80 mm
L5
C5
V
CC
C7
L7
C8
75
L6
C6
MEA971
output
60 mm
Ω
handbook, full pagewidth
mounting
screws
M 2.5 (8x)
80 mm
Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board.
September 1995 5
MEA969
60 mm
MEA970
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