Philips BFG93A-X, BFG93A Datasheet

DATA SH EET

ook, halfpage

M3D071

BFG93A; BFG93A/X

NPN 6 GHz wideband transistors

Product speciﬁcation Supersedes data of 1995 Sep 25

1998 Sep 23

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

excellent reliability.

APPLICATIONS

PINNING

PIN DESCRIPTION

BFG93A

1 collector 2 base 3 emitter 4 emitter

handbook, 2 columns

12

Top view

34

MSB014

Wideband applications in the UHF and microwave range.

BFG93A/X

Fig.1 SOT143B.

1 collector

DESCRIPTION

NPN transistor in a 4-pin, dual-emitter SOT143B plastic package.

2 emitter 3 base 4 emitter

MARKING

TYPE NUMBER CODE

BFG93A R8 BFG93A/X V15

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V V I P C f G

CBO CEO

C

tot

re

T

UM

collector-base voltage open emitter −−15 V collector-emitter voltage open base −−12 V collector current (DC) −−35 mA total power dissipation Ts≤ 85 °C −−300 mW feedback capacitance IC=ic= 0; VCB= 5 V; f = 1 MHz − 0.6 − pF transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz 4.5 6 − GHz maximum unilateral

power gain

IC= 30 mA; VCE=8V; T f = 1 GHz

I

= 30 mA; VCE=8V; T

C

amb

=25°C;

− 16 − dB

− 10 − dB

f = 2 GHz

F noise ﬁgure Γ

= Γ

; IC= 5 mA; VCE=8V;

opt

=25°C; f = 1 GHz

T

s amb

− 1.7 − dB

1998 Sep 23 2

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 15 V collector-emitter voltage open base − 12 V emitter-base voltage open collector − 2V collector current (DC) − 35 mA total power dissipation Ts≤ 85 °C; note 1 − 300 mW storage temperature range −65 +150 °C junction operating temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 290 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

CHARACTERISTICS

=25°C unless otherwise speciﬁed.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h C C C f

T

G

FE

c e re

UM

collector leakage current IE= 0; VCB=5V −−50 nA DC current gain IC= 30 mA; VCE= 5 V 40 90 − collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 0.9 − pF emitter capacitance IC=ic= 0; VEB=5V; f=1MHz − 1.9 − pF feedback capacitance IC=ic= 0; VCB=5V; f=1MHz − 0.6 − pF transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz 4.5 6 − GHz maximum unilateral power

gain; note 1

IC= 30 mA; VCE=8V; T f = 1 GHz

I

= 30 mA; VCE=8V; T

C

amb

=25°C;

− 16 − dB

− 10 − dB

f = 2 GHz

= Γ

F noise ﬁgure Γ

; IC= 5 mA; VCE=8V;

s

opt

T

=25°C; f = 1 GHz

amb

Γ

= Γ

; IC= 5 mA; VCE=8V;

s

opt

T

=25°C; f = 2 GHz

amb

− 1.7 − dB

− 2.3 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

1998 Sep 23 3

2

S

G

UM

10

-------------------------------------------------------------1S

–()1S

21

2

11

–()

dB.log=

2

22

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

150

Fig.2 Power derating curve.

Ts(

MBG245

o

C)

120

handbook, halfpage

h

FE

80

40

0

0102030

VCE=5V.

I (mA)

C

Fig.3 DC current gain as a function of collector

current; typical values.

MCD087

12

MCD088

V (V)

CB

1.0

handbook, halfpage

C

re

(pF)

0.8

0.6

0.4

0.2

0

048 16

IC=ic= 0; f= 1 MHz.

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

1998 Sep 23 4

handbook, halfpage

8

f

T

(GHz)

6

4

2

0

01020 40

VCE= 5 V; T

=25°C; f= 500MHz.

amb

Fig.5 Transition frequency as a function of

collector current; typical values.

30

MCD089

I (mA)

C

Philips Semiconductors Product speciﬁcation

NPN 6 GHz wideband transistors BFG93A; BFG93A/X

30

handbook, halfpage

gain (dB)

20

10

0

VCE= 8 V; f = 500 MHz.

10 20 40

30

MSG

G

I (mA)

C

Fig.6 Gain as a function of collector current;

typical values.

MCD090

UM

30

handbook, halfpage

gain (dB)

30

MSG

G

I (mA)

C

20

10

0

VCE= 8 V; f = 1 GHz.

10 20 40

Fig.7 Gain as a function of collector current;

typical values.

MCD091

UM

50

handbook, halfpage

gain (dB)

40

30

20

10

0

10

VCE= 8 V; IC= 10 mA.

MSG

G

UM

2

10

MCD092

G

max

3

f (MHz)

4

10

Fig.8 Gain as a function of frequency; typical

values.

1998 Sep 23 5

50

handbook, halfpage

gain (dB)

40

30

20

10

0

10

VCE= 8 V; IC=30mA.

MSG

G

UM

G

max

2

10

3

10

f (MHz)

Fig.9 Gain as a function of frequency; typical

values.

MCD093

4

10