Philips BFG92X User Manual

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ook, halfpage

M3D071

BFG92A/X

NPN 5 GHz wideband transistor

Product specification

1998 Sep 23

Supersedes data of 1995 Sep 12

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

DESCRIPTION

Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.

handbook, 2 columns

34

excellent reliability.

APPLICATIONS

Wideband applications in the UHF
and microwave range.

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Marking code: V14.

12

Top view

MSB014

Fig.1 SOT143B.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
C
f
G

CBO
CEO

C

tot

re

T

UM

collector-base voltage −−20 V
collector-emitter voltage −−15 V
collector current (DC) −−25 mA
total power dissipation Ts≤ 60 °C −−400 mW
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain

IC= 15 mA; VCE=10V; T
f = 1 GHz

I

= 15 mA; VCE=10V; T

C

amb

amb

=25°C;

=25°C;

− 16 − dB

− 11 − dB

f = 2 GHz

F noise figure Γ

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 1 GHz

amb

− 2 − dB

1998 Sep 23 2

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 25 mA
total power dissipation Ts≤ 60 °C; note 1 − 400 mW
storage temperature range −65 150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 290 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure Γ

collector leakage current IE= 0; VCB=10V −−50 nA
DC current gain IC= 15 mA; VCE= 10 V 40 90 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.6 − pF
emitter capacitance IC=ic= 0; VEB= 10 V; f = 1 MHz − 0.9 − pF
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain; note 1

IC= 15 mA; VCE=10V;
T

=25°C; f = 1 GHz

amb

I

= 15 mA; VCE=10V;

C

T

=25°C; f = 2 GHz

amb

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 1 GHz

amb

Γ

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 2 GHz

amb

− 16 − dB

− 11 − dB

− 2 − dB

− 3 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

1998 Sep 23 3

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dB.log=

2

22

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

800

handbook, halfpage

P

tot

(mW)

600

400

200

0

0 50 100 200

150

Ts(

Fig.2 Power derating curve.

MBB963 - 1

o

C)

I (mA)

C

MCD074

120

handbook, halfpage

h

FE

80

40

0

0102030

VCE=10V.

Fig.3 DC current gain as a function of collector

current; typical values.

18

MCD075

V (V)

CB

0.6

handbook, halfpage

C

re

(pF)

0.4

0.2

0

0

IC=ic= 0; f= 1 MHz.

624

12

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

1998 Sep 23 4

handbook, halfpage

6

f

T

(GHz)

4

2

0

0102030

VCE= 10 V; T

=25°C; f = 500 MHz.

amb

Fig.5 Transition frequency as a function of

collector current; typical values.

MBB275

I (mA)

C

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG92A/X

30

handbook, halfpage

gain
(dB)

20

10

0

0

VCE= 10 V; f = 500 MHz.

510

MSG

G

UM

15

20

I (mA)

Fig.6 Gain as a function of collector current;

typical values.

MCD077

C

UM

MCD078

I (mA)

C

25

30

handbook, halfpage

gain
(dB)

20

10

25

0

0

VCE= 10 V; f = 1 GHz.

5101520

MSG

G

Fig.7 Gain as a function of collector current;

typical values.

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 10 V; IC= 5 mA.

MSG

G

UM

2

10

10

MCD079

G

max

3

f
(MHz)

4

10

Fig.8 Gain as a function of frequency; typical

values.

1998 Sep 23 5

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 10 V; IC=15mA.

MSG

G

UM

G

max

2

10

3

10

f (MHz)

Fig.9 Gain as a function of frequency; typical

values.

MCD080

4

10