DISCRETE SEMICONDUCTORS
DATA SH EET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
PINNING
DESCRIPTION
PIN
BFG67 BFG67/X BFG67/XR
1 collector collector collector
2 base emitter emitter
3 emitter base base
4 emitter emitter emitter
handbook, 2 columns
12
Top view
34
MSB014
handbook, 2 columns
Top view
43
12
MSB035
MARKING
TYPE NUMBER CODE
BFG67 (Fig.1) V3
BFG67/X (Fig.1) V12
Fig.1 Simplified outline
SOT143B.
Fig.2 Simplified outline
SOT143R.
BFG67/XR (Fig.2) V26
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F noise figure Γ
collector-emitter voltage open base − 10 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 65 °C − 300 mW
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz 0.5 − pF
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz 8 − GHz
maximum unilateral power
gain
IC= 15 mA; VCE=8V;
T
=25°C; f= 1 GHz
amb
= Γ
; IC= 5 mA; VCE=8V;
opt
=25°C; f= 1 GHz
= Γ
; IC= 5 mA; VCE=8V;
opt
=25°C; f= 2 GHz
T
Γ
T
s
amb
s
amb
17 − dB
1.3 − dB
2.2 − dB
1998 Oct 02 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 65 °C; see Fig.3; note 1 − 380 mW
storage temperature range −65 150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 290 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
150
MBC984 - 1
o
Ts(
C)
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
Fig.3 Power derating curve.
1998 Oct 02 3
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F noise figure Γ
collector leakage current VCB=5V; IE=0 −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz − 8 − GHz
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
maximum unilateral power
gain; note 1
IC= 15 mA; VCE=8V;
T
=25°C; f = 1 GHz
amb
I
= 15 mA; VCE=8V;
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 5 mA; VCE=8V
opt
=25°C; f = 1 GHz
= Γ
; IC= 15 mA; VCE=8V;
opt
=25°C; f = 1 GHz
= 5 mA; VCE=8V;
= 25°C; f = 2 GHz; ZS=60Ω
= 15 mA; VCE=8V;
=25°C; f = 2 GHz; ZS=60Ω
T
Γ
T
I
T
I
T
s
amb
s
amb
C
amb
C
amb
− 17 − dB
− 10 − dB
− 1.3 − dB
− 1.7 − dB
− 2.5 − dB
− 3 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
1998 Oct 02 4
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
120
handbook, halfpage
h
FE
80
40
0
0
VCE=5V.
20 40
I (mA)
C
Fig.4 DC current gain as a function of collector
current.
MBB301
V
CB
MBB302
(V)
0.8
handbook, halfpage
C
re
(pF)
0.6
0.4
0.2
0
60
0
IC=ic= 0; f= 1 MHz.
4
81216
Fig.5 Feedback capacitance as a function of
collector-base voltage.
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020 40
VCE= 8 V; T
=25°; f= 2GHz.
amb
Fig.6 Transition frequency as a function of
collector current.
30
MBB303
I (mA)
C
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
0
VCE= 8 V; f = 1 GHz.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
MSG
G
UM
10 20 40
G
Fig.7 Gain as a function of collector current.
max
30
MBB304
IC (mA)
1998 Oct 02 5
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
50
handbook, halfpage
gain
(dB)
40
30
20
MSG
10
0
10
2
10
VCE= 8 V; IC= 5 mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
Fig.8 Gain as a function of frequency.
MBB305
50
handbook, halfpage
gain
MBB306
(dB)
40
G
UM
30
20
G
max
3
10
f (MHz)
4
10
10
0
10
G
UM
MSG
G
max
2
10
3
10
f (MHz)
4
10
VCE= 8 V; IC=15mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
Fig.9 Gain as a function of frequency.
50
handbook, halfpage
gain
(dB)
40
30
G
MSG
20
10
0
10
2
10
VCE= 8 V; IC= 30 mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
Fig.10 Gain as a function of frequency.
UM
MBB307
4
handbook, halfpage
F
MBB308
f = 2 GHz
(dB)
3
1 GHz
900 MHz
2
G
max
500 MHz
1
3
10
f (MHz)
4
10
0
101
I (mA)
C
100
VCE=8V.
Fig.11 Minimum noise figure as a function of
collector current.
1998 Oct 02 6
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
4
handbook, halfpage
F
(dB)
3
2
1
0
10
VCE=8V.
2
10
3
I = 30 mA
C
15 mA
5 mA
f (MHz)
Fig.12 Minimum noise figure as a function of
frequency.
BFG67/X
f
(MHz)
V
(V)
CE
I
C
(mA)
500 8 5
MBB309
4
10
stability
circle
2
0.5
unstable region
1
Noise Parameters
F
min
(dB)
Gamma (opt)
Rn/50
(mag) (ang)
0.95 0.455 33.8 0.288
ZO=50Ω.
0.2
+ j
0
− j
0.2
1998 Oct 02 7
10.2 10520.5
1.5 dB
2 dB
3 dB
0.5
1
Fig.13 Noise circle figure.
F
min
=0.95 dB
OPT
5
10
∞
10
5
2
MBB317
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
BFG67/X
f
(MHz)
V
(V)
CE
I
C
(mA)
1000 8 5
Noise Parameters
F
min
(dB)
Gamma (opt)
Rn/50
(mag) (ang)
1.3 0.375 65.9 0.304
unstable
region
0.2
+ j
0
− j
stability
circle
0.5
0.2 1 10520.5
2 dB
1
F
min
=1.3 dB
OPT
2
5
10
∞
10
BFG67/X
f
(MHz)
V
(V)
CE
I
C
(mA)
2000 8 5
Noise Parameters
F
min
(dB)
Gamma (opt)
Rn/50
(mag) (ang)
2.2 0.391 136.5 0.184
Average Gain Parameters
G
MAX
(dB)
Gamma (max)
(mag) (ang)
12 0.839 −170
ZO=50Ω.
+ j
– j
0.2
0
0.2
0.2
G
max
=12dB
3 dB
4 dB
0.5
1
Fig.14 Noise circle figure.
1
0.5
F
=2.2 dB
min
OPT
11 dB
10 dB
9 dB
8 dB
0.5
3 dB
4 dB
5 dB
5
2
MBB316
2
5
10
101520.2 0.5
∞
10
5
2
ZO=50Ω.
1998 Oct 02 8
1
Fig.15 Noise circle figure.
MBB315
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
handbook, full pagewidth
VCE= 8 V; IC= 15 mA; ZO=50Ω.
1
0.5
0.2
+ j
0
− j
0.2
3 GHz
10.2 10520.5
0.5
1
2
40 MHz
2
Fig.16 Common emitter input reflection coefficient (S11).
5
10
∞
10
5
MBB314
handbook, full pagewidth
VCE= 8 V; IC= mA; ZO=50Ω.
90°
120°
150°
40 MHz
40 20
50 30 10
180°
3 GHz
60°
30°
+ϕ
0°
−ϕ
150°
120°
60°
90°
30°
MBB313
Fig.17 Common emitter forward transmission coefficient (S21).
1998 Oct 02 9
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
handbook, full pagewidth
handbook, full pagewidth
VCE= 8 V; IC= 15 mA.
1
0.5
0.2
+ j
0
− j
0.2
0.5
10.2 10520.5
3 GHz
1
2
5
10
∞
40 MHz
10
5
2
MBB312
Fig.18 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
VCE= 8 V; IC= 15 mA.
90°
120°
150°
0.4 0.2
0.5 0.3 0.1
180°
150°
120°
40 MHz
90°
60°
3 GHz
60°
MBB311
Fig.19 Common emitter output reflection coefficient (S22).
30°
+ϕ
0°
−ϕ
30°
1998 Oct 02 10
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
L
b
1
e
1
detail X
p
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
VERSION
1.1
0.9
OUTLINE
SOT143B
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
e
1.9
1998 Oct 02 11
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
Plastic surface mounted package; reverse pinning; 4 leads SOT143R
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
43
Q
A
A
1
c
12
L
b
1
e
1
detail X
p
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
VERSION
1.1
0.9
OUTLINE
SOT143R
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
e
1.9
1998 Oct 02 12
e
1.7
H
L
E
1
2.5
2.1
0.55
0.25
p
0.45
0.25
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-03-10
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02 13
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
NOTES
1998 Oct 02 14
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
NOTES
1998 Oct 02 15
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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998Oct 02 Document order number: 9397 75004349
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