Page 1
查询BFG67W供应商查询BFG67W供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
August 1995
Page 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
They are intended for wideband
applications in the GHz range such as
analog satellite television systems
and portable RF communication
equipment.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
MARKING
TYPE NUMBER CODE
BFG67W V2
BFG67W/X V6
BFG67W/XR V7
PINNING
PIN DESCRIPTION
BFG67W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG67W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG67W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
BFG67W
BFG67W/X; BFG67W/XR
page
Top view
Fig.1 SOT343.
lfpage
21
Top view
Fig.2 SOT343R.
34
21
MBK523
43
MSB842
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
C
f
G
CBO
CEO
C
tot
FE
re
T
UM
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−10 V
collector current (DC) −−50 mA
total power dissipation up to Ts=85°C −−500 mW
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
feedback capacitance IC= 0; VCE= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz; T
maximum unilateral
IC= 15 mA; VCE= 8 V; f = 1 GHz; T
=25°C − 7.5 − GHz
amb
=25°C − 15.5 − dB
amb
power gain
F noise figure Γ
; IC= 5 mA; VCE= 8 V; f = 2 GHz − 2.2 − dB
s=Γopt
August 1995 2
Page 3
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
BFG67W
BFG67W/X; BFG67W/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note to the “Limiting values” and “Thermal characteristics”
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation up to Ts=85°C; see Fig.3; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
thermal resistance from junction to soldering point up to Ts=85°C; note 1 180 K/W
is the temperature at the soldering point of the collector pin.
600
handbook, halfpage
P
tot
(mW)
400
200
0
0 50 100 200
150
T ( C)
Fig.3 Power derating curve.
MBG248
s
o
August 1995 3
Page 4
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
BFG67W
BFG67W/X; BFG67W/XR
CHARACTERISTICS
T
=25°C (unless otherwise specified).
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown
voltage
V
(BR)CEO
collector-emitter breakdown
voltage
V
(BR)EBO
emitter-base breakdown
voltage
I
CBO
h
f
T
C
C
C
G
FE
c
e
re
UM
collector cut-off current open emitter; VCB= 5 V; IE=0 −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz;
collector capacitance IE=ie= 0; VCE= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC= 0; VCE= 8 V; f = 1 MHz − 0.5 − pF
maximum unilateral power
gain; note 1
F noise figure Γ
open emitter; IC=10µA; IE=0 −−20 V
open base; IC= 10 mA; IB=0 −−10 V
open collector; IE=10µA; IC=0 −−2.5 V
− 7.5 − GHz
T
=25°C
amb
IC= 15 mA; VCE= 8 V; f = 1 GHz;
T
=25°C
amb
= 15 mA; VCE= 8 V; f = 2 GHz;
I
C
T
=25°C
amb
; IC= 5 mA; VCE=8V;
s=Γopt
− 15.5 − dB
− 10 − dB
− 1.3 − dB
f = 1 GHz
Γ
; IC= 15 mA; VCE=8V;
s=Γopt
− 1.7 − dB
f = 1 GHz
Γ
; IC= 5 mA; VCE=8V;
s=Γopt
− 2.2 − dB
f = 2 GHz
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero.
UM
August 1995 4
2
s
G
UM
10
-----------------------------------------------------------1s
–()1s
21
2
11
–()
dB.log=
2
22
Page 5
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
120
handbook, halfpage
h
FE
80
40
0
0
20 40
MBB301
I (mA)
C
BFG67W
BFG67W/X; BFG67W/XR
handbook, halfpage
60
1
C
re
(pF)
0.8
0.6
0.4
0.2
0
048 16
MLB984
12
(V)
V
CB
VCE=5V.
Fig.4 DC current gain as a function of collector
current; typical values.
30
MLB985
I (mA)
C
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020 40
IC= 0; f= 1 MHz.
Fig.5 Feedbackcapacitance as a function of
collector-base voltage; typical values.
f = 2 GHz; VCE= 8 V; T
amb
=25°C.
Fig.6 Transition frequency as a function of
collector current; typical values.
August 1995 5
Page 6
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
G
max
I (mA)
C
MLB986
30
handbook, halfpage
gain
(dB)
20
10
0
0
MSG
G
UM
10
20
BFG67W
BFG67W/X; BFG67W/XR
3
G
max
f (MHz)
MLB987
4
10
50
handbook, halfpage
gain
(dB)
30
G
40
30
20
10
UM
MSG
0
10
2
10
10
f = 1 GHz; VCE=8V.
Fig.7 Gain as a function of collector current;
typical values.
50
handbook, halfpage
gain
(dB)
G
40
30
20
10
0
UM
MSG
10
2
10
3
10
f (MHz)
IC= 5 mA; VCE=8V.
Fig.8 Gain as a function of frequency;
typical values.
3
G
max
f (MHz)
MLB989
4
10
MLB988
G
max
4
10
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10
G
MSG
UM
2
10
10
IC= 15 mA; VCE=8V.
Fig.9 Gain as a function of frequency;
typical values.
August 1995 6
IC= 30 mA; VCE=8V.
Fig.10 Gain as a function of frequency;
typical values.
Page 7
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
4
handbook, halfpage
F
(dB)
3
2
1
0
101
I (mA)
MBB308
f = 2 GHz
1 GHz
900 MHz
500 MHz
C
100
(dB)
4
F
3
2
1
0
2
10
handbook, halfpage
BFG67W
BFG67W/X; BFG67W/XR
MBB309
I = 30 mA
C
15 mA
5 mA
3
10
f (MHz)
4
10
VCE=8V.
Fig.11 Minimum noise figure as a function
of collector current; typical values.
VCE=8V.
Fig.12 Minimum noise figure as a function of
frequency; typical values.
August 1995 7
Page 8
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
handbook, full pagewidth
o
unstable
region
o
180
f = 500 MHz; VCE= 8 V; IC= 5 mA; Zo=50Ω.
135
0
135
0.5
0.2
0.2 2
0.2
0.5
o
o
90
1
F = 0.95 dB
min
F = 2 dB
F = 3 dB
1
F = 1.5 dB
1
o
90
0.5 5
stability
circle
Γ
opt
2
2
BFG67W
BFG67W/X; BFG67W/XR
1.0
o
45
5
5
o
45
MLB990
0.8
0.6
0.4
0.2
o
00
1.0
handbook, full pagewidth
180
unstable
region
f = 1 GHz; VCE= 8 V; IC= 5 mA; Zo=50Ω.
Fig.13 Common emitter noise figure circles; typical values.
stability
circle
o
135
o
0
135
0.5
0.2
0.2 0.5 5
0.2
0.5
o
F = 4 dB
o
90
1
F = 1.30 dB
min
1
F = 2 dB
F = 3 dB
1
o
90
o
45
2
Γ
opt
2
2
5
5
o
45
MLB991
1.0
0.8
0.6
0.4
0.2
o
00
1.0
Fig.14 Common emitter noise figure circles; typical values.
August 1995 8
Page 9
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
handbook, full pagewidth
o
o
180
f = 2 GHz; VCE= 8 V; IC= 5 mA; Zo=50Ω.
135
0
135
0.2
0.2 0.5
G = 10.4 dB
max
G = 10 dB
0.2
G = 9 dB
o
0.5
0.5
F = 2.20 dB
min
Γ
opt
o
90
1
2
F = 4 dB
F = 3 dB
1 5
1
o
90
F = 5 dB
2
2
BFG67W
BFG67W/X; BFG67W/XR
1.0
o
45
5
5
o
45
MLB992
0.8
0.6
0.4
0.2
o
00
1.0
Fig.15 Common emitter noise figure circles; typical values.
August 1995 9
Page 10
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
handbook, full pagewidth
o
135
0.2
0.2 0.5 2
0
0.2
o
135
VCE= 8 V; IC= 15 mA; Zo=50Ω.
180
o
0.5
0.5
3 GHz
o
90
1
1 5
40 MHz
1
o
90
BFG67W
BFG67W/X; BFG67W/XR
1.0
o
45
2
5
5
2
o
45
MLB993
0.8
0.6
0.4
0.2
o
00
1.0
handbook, full pagewidth
VCE= 8 V; IC= 15 mA.
Fig.16 Common emitter input reflection coefficient (s11); typical values.
o
90
o
135
40 MHz
o
180
50 40 30 20 10
o
135
90
3 GHz
o
o
45
o
0
o
45
MLB994
Fig.17 Common emitter forward transmission coefficient (s21); typical values.
August 1995 10
Page 11
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
handbook, full pagewidth
o
135
o
180
0.25 0.20 0.15 0.10 0.05
o
135
90
o
3 GHz
40 MHz
BFG67W
BFG67W/X; BFG67W/XR
o
45
o
0
o
45
VCE= 8 V; IC= 15 mA.
handbook, full pagewidth
VCE= 8 V; IC= 15 mA; Zo=50Ω.
o
90
MLB995
Fig.18 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
0.8
0.6
0.4
0.2
o
00
1.0
180
1
o
135
o
0
135
0.5
0.2
0.2 0.5 2
0.2
0.5
o
1 5
3 GHz
1
90
o
2
40 MHz
2
o
45
5
5
o
45
MLB996
Fig.19 Common emitter output reflection coefficient (s22); typical values.
August 1995 11
Page 12
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
SPICE parameters for the BFG67W crystal
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 556.4 aA
2 BF 170.0 −
3 NF 0.995 −
4 VAF 48.03 V
5 IKF 918.1 mA
6 ISE 10.47 fA
7 NE 1.479 −
8 BR 142.1 −
9 NR 0.994 −
10 VAR 2.555 V
11 IKR 9.632 A
12 ISC 438.2 aA
13 NC 1.089 −
14 RB 10.00 Ω
15 IRB 1.000 µA
16 RBM 10.00 Ω
17 RE 655.9 mΩ
18 RC 2.000 Ω
(1)
19
(1)
20
(1)
21
22 CJE 1.137 pF
23 VJE 600.0 mV
24 MJE 0.249 −
25 TF 11.97 ps
26 XTF 25.99 −
27 VTF 1.223 V
28 ITF 197.3 mA
29 PTF 10.03 deg
30 CJC 515.9 fF
31 VJC 155.8 mV
32 MJC 56.02 −
33 XCJC 130.0 −
34 TR 1.877 ns
(1)
35
XTB 0.000 −
EG 1.110 eV
XTI 3.000 −
CJS 0.000 F
BFG67W
BFG67W/X; BFG67W/XR
SEQUENCE No. PARAMETER VALUE UNIT
(1)
36
(1)
37
38 FC 0.870 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
L1 L2
B
C
be ce
QLB= 50; QLE= 50; QL
= scaling frequency = 1 GHz.
f
c
Fig.20 Package equivalent circuit SOT343;
List of components (see Fig.20)
DESIGNATION VALUE UNIT
C
be
C
cb
C
ce
L1 0.34 nH
L2 0.10 nH
L3 0.25 nH
L
B
L
E
VJS 750.0 mV
MJS 0.000 −
C
cb
L
B
E'
L
E
L3
E
(f)=QL
B,E
B,E
√(f/fc);
SOT343R.
70 fF
50 fF
115 fF
0.40 nH
0.40 nH
C
MBC964
CB' C'
August 1995 12
Page 13
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
PACKAGE OUTLINES
handbook, full pagewidth
0.2
A
M
2.2
2.0
B
0.2
M
43
12
0.7
0.5
1.4
1.2
2.2
1.8
0.4
0.2
A
1.35
1.15
B
BFG67W/X; BFG67W/XR
1.00
max
0.25
0.10
MSB374
0.2
0.3
0.1
0.1
max
BFG67W
Dimensions in mm.
handbook, full pagewidth
0.2
Fig.21 SOT343.
1.00
max
A
M
0.2
M
34
2.2
2.0
21
1.4
1.2
2.2
1.8
0.4
B
0.2
A
1.35
1.15
0.3
0.1
0.7
0.5
B
0.1
max
0.25
0.10
0.2
MSB367
Dimensions in mm.
Fig.22 SOT343R.
August 1995 13
Page 14
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
BFG67W
BFG67W/X; BFG67W/XR
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1995 14
Page 15
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor
BFG67W
BFG67W/X; BFG67W/XR
NOTES
August 1995 15
Page 16
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other industrial or intellectual property rights.
Printed in The Netherlands
123065/1500/01/pp16 Date of release: August 1995
Document order number: 9397 739 20011
Philips Semiconductors
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