Philips BFG67W-XR, BFG67W-X, BFG67W Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFG67W
BFG67W/X; BFG67W/XR

NPN 8 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

Philips Semiconductors

August 1995

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

excellent reliability.

APPLICATIONS

They are intended for wideband
applications in the GHz range such as
analog satellite television systems
and portable RF communication
equipment.

DESCRIPTION

NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.

MARKING

TYPE NUMBER CODE

BFG67W V2
BFG67W/X V6
BFG67W/XR V7

PINNING

PIN DESCRIPTION

BFG67W (see Fig.1)

1 collector
2 base
3 emitter
4 emitter

BFG67W/X (see Fig.1)

1 collector
2 emitter
3 base
4 emitter

BFG67W/XR (see Fig.2)

1 collector
2 emitter
3 base
4 emitter

BFG67W

BFG67W/X; BFG67W/XR

page

Top view

Fig.1 SOT343.

lfpage

21

Top view

Fig.2 SOT343R.

34

21

MBK523

43

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
C
f
G

CBO
CEO

C

tot
FE

re

T

UM

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−10 V
collector current (DC) −−50 mA
total power dissipation up to Ts=85°C −−500 mW
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
feedback capacitance IC= 0; VCE= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz; T
maximum unilateral

IC= 15 mA; VCE= 8 V; f = 1 GHz; T

=25°C − 7.5 − GHz

amb

=25°C − 15.5 − dB

amb

power gain

F noise figure Γ

; IC= 5 mA; VCE= 8 V; f = 2 GHz − 2.2 − dB

s=Γopt

August 1995 2

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor

BFG67W

BFG67W/X; BFG67W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note to the “Limiting values” and “Thermal characteristics”

1. T

s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation up to Ts=85°C; see Fig.3; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

thermal resistance from junction to soldering point up to Ts=85°C; note 1 180 K/W

is the temperature at the soldering point of the collector pin.

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

150

T ( C)

Fig.3 Power derating curve.

MBG248

s

o

August 1995 3

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor

BFG67W

BFG67W/X; BFG67W/XR

CHARACTERISTICS

T

=25°C (unless otherwise specified).

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

collector-base breakdown
voltage

V

(BR)CEO

collector-emitter breakdown
voltage

V

(BR)EBO

emitter-base breakdown
voltage

I

CBO

h
f

T

C
C
C
G

FE

c
e
re
UM

collector cut-off current open emitter; VCB= 5 V; IE=0 −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz;

collector capacitance IE=ie= 0; VCE= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC= 0; VCE= 8 V; f = 1 MHz − 0.5 − pF
maximum unilateral power

gain; note 1

F noise figure Γ

open emitter; IC=10µA; IE=0 −−20 V

open base; IC= 10 mA; IB=0 −−10 V

open collector; IE=10µA; IC=0 −−2.5 V

− 7.5 − GHz

T

=25°C

amb

IC= 15 mA; VCE= 8 V; f = 1 GHz;
T

=25°C

amb

= 15 mA; VCE= 8 V; f = 2 GHz;

I

C

T

=25°C

amb

; IC= 5 mA; VCE=8V;

s=Γopt

− 15.5 − dB

− 10 − dB

− 1.3 − dB

f = 1 GHz

Γ

; IC= 15 mA; VCE=8V;

s=Γopt

− 1.7 − dB

f = 1 GHz

Γ

; IC= 5 mA; VCE=8V;

s=Γopt

− 2.2 − dB

f = 2 GHz

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

UM

August 1995 4

2

s

G

UM

10

-----------------------------------------------------------­1s

–()1s

21

2

11

–()

dB.log=

2

22

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor

120

handbook, halfpage

h

FE

80

40

0

0

20 40

MBB301

I (mA)

C

BFG67W

BFG67W/X; BFG67W/XR

handbook, halfpage

60

1

C

re

(pF)

0.8

0.6

0.4

0.2

0

048 16

MLB984

12

(V)

V

CB

VCE=5V.

Fig.4 DC current gain as a function of collector

current; typical values.

30

MLB985

I (mA)

C

10

handbook, halfpage

f

T

(GHz)

8

6

4

2

0

01020 40

IC= 0; f= 1 MHz.

Fig.5 Feedbackcapacitance as a function of

collector-base voltage; typical values.

f = 2 GHz; VCE= 8 V; T

amb

=25°C.

Fig.6 Transition frequency as a function of

collector current; typical values.

August 1995 5