Philips BFG67-XR, BFG67-X, BFG67 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
PINNING
DESCRIPTION
PIN
BFG67 BFG67/X BFG67/XR
1 collector collector collector
2 base emitter emitter
3 emitter base base
4 emitter emitter emitter
handbook, 2 columns
12
Top view
34
MSB014
handbook, 2 columns
Top view
43
12
MSB035
MARKING
TYPE NUMBER CODE
BFG67 (Fig.1) V3
BFG67/X (Fig.1) V12
Fig.1 Simplified outline
SOT143B.
Fig.2 Simplified outline
SOT143R.
BFG67/XR (Fig.2) V26
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F noise figure Γ
collector-emitter voltage open base − 10 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 65 °C − 300 mW
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz 0.5 − pF
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz 8 − GHz
maximum unilateral power
gain
IC= 15 mA; VCE=8V;
T
=25°C; f= 1 GHz
amb
= Γ
; IC= 5 mA; VCE=8V;
opt
=25°C; f= 1 GHz
= Γ
; IC= 5 mA; VCE=8V;
opt
=25°C; f= 2 GHz
T
Γ
T
s
amb
s
amb
17 − dB
1.3 − dB
2.2 − dB
1998 Oct 02 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 65 °C; see Fig.3; note 1 − 380 mW
storage temperature range −65 150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 290 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
150
MBC984 - 1
o
Ts(
C)
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
Fig.3 Power derating curve.
1998 Oct 02 3
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F noise figure Γ
collector leakage current VCB=5V; IE=0 −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz − 8 − GHz
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
maximum unilateral power
gain; note 1
IC= 15 mA; VCE=8V;
T
=25°C; f = 1 GHz
amb
I
= 15 mA; VCE=8V;
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 5 mA; VCE=8V
opt
=25°C; f = 1 GHz
= Γ
; IC= 15 mA; VCE=8V;
opt
=25°C; f = 1 GHz
= 5 mA; VCE=8V;
= 25°C; f = 2 GHz; ZS=60Ω
= 15 mA; VCE=8V;
=25°C; f = 2 GHz; ZS=60Ω
T
Γ
T
I
T
I
T
s
amb
s
amb
C
amb
C
amb
− 17 − dB
− 10 − dB
− 1.3 − dB
− 1.7 − dB
− 2.5 − dB
− 3 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
1998 Oct 02 4
Philips Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
120
handbook, halfpage
h
FE
80
40
0
0
VCE=5V.
20 40
I (mA)
C
Fig.4 DC current gain as a function of collector
current.
MBB301
V
CB
MBB302
(V)
0.8
handbook, halfpage
C
re
(pF)
0.6
0.4
0.2
0
60
0
IC=ic= 0; f= 1 MHz.
4
81216
Fig.5 Feedback capacitance as a function of
collector-base voltage.
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020 40
VCE= 8 V; T
=25°; f= 2GHz.
amb
Fig.6 Transition frequency as a function of
collector current.
30
MBB303
I (mA)
C
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
0
VCE= 8 V; f = 1 GHz.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
MSG
G
UM
10 20 40
G
Fig.7 Gain as a function of collector current.
max
30
MBB304
IC (mA)
1998 Oct 02 5
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