Philips BFG590W-X, BFG590W Datasheet
DATA SH EET
ook, halfpage
M3D123
BFG590W; BFG590W/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 15
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590W; BFG590W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF
communications subscriber
equipment in the GHz range
• Ideally suitable for use in class-A,
(A)B and C amplifiers with either
pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
PINNING
PIN DESCRIPTION
BFG590W
1 collector
2 base
3 emitter
4 emitter
BFG590W/X
1 collector
2 emitter
3 base
4 emitter
age
Top view
34
21
MBK523
Fig.1 SOT343N.
MARKING
TYPE NUMBER CODE
BFG590W T1
BFG590W/X T2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
C
f
G
CBO
CEO
C
tot
FE
re
T
UM
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 70 mA; VCE= 8 V 60 90 250
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
transition frequency IC= 80 mA; VCE= 4 V; f = 1 GHz; T
maximum unilateral
IC= 80 mA; VCE= 4 V; f = 900 MHz; T
=25°C − 5 − GHz
amb
=25°C − 13 − dB
amb
power gain
2
|S
|
21
insertion power gain IC= 80 mA; VCE= 4 V; f = 900 MHz; T
=25°C − 11 − dB
amb
1998 Oct 15 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590W; BFG590W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
150
MBG248
o
T ( C)
s
600
handbook, halfpage
P
tot
(mW)
400
200
0
0 50 100 200
Fig.2 Power derating curve.
1998 Oct 15 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590W; BFG590W/X
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
f
T
C
re
G
UM
2
|S
|
21
P
L1
collector-base breakdown voltage IC= 0.1 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 15 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector leakage current VCB=10V; IE=0 −−100 nA
DC current gain IC= 70 mA; VCE= 8 V 60 90 250
transition frequency IC= 80 mA; VCE= 4 V; f = 1 GHz;
T
=25°C
amb
− 5 − GHz
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
maximum unilateral power gain;
note 1
insertion power gain IC= 80 mA; VCE= 4 V; f = 1 GHz;
output power at 1 dB gain
compression
IC= 80 mA; VCE= 4 V; f = 900 MHz;
T
=25°C
amb
= 80 mA; VCE= 4 V; f = 2 GHz;
I
C
T
=25°C
amb
T
=25°C
amb
IC= 80 mA; VCE= 5 V; f = 900 MHz;
RL=50Ω; T
amb
=25°C
− 13 − dB
− 7.5 − dB
− 11 − dB
− 21 − dBm
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero.
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
1998 Oct 15 4
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