Philips BFG590-X, BFG590 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D071
BFG590; BFG590/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of 1995 Sep 19
1998 Oct 02
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER CODE
BFG590 N38
BFG590/X N44
PINNING
DESCRIPTION
PIN
BFG590 BFG590/X
1 collector collector
2 base emitter
3 emitter base
4 emitter emitter
handbook, 2 columns
12
Top view
Fig.1 Simplified outline SOT143B.
34
MSB014
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
2
|
|S
21
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 60 °C −−400 mW
DC current gain IC= 35 mA; VCE=8V 5090280
feedback capacitance IC= 0; VCE=8V; f=1MHz − 0.7 − pF
transition frequency IC= 80 mA; VCE=4V; f=1GHz − 5 − GHz
maximum unilateral power gain IC= 80 mA; VCE=4V;
f = 900 MHz; T
amb
=25°C
insertion power gain IC= 80 mA; VCE=4V;
f = 900 MHz; T
amb
=25°C
− 13 − dB
− 11 − dB
1998 Oct 02 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 60 °C; see Fig.2; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 60 °C; note 1 290 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
600
handbook, halfpage
P
tot
(mW)
400
200
MBG249
0
0 50 100 200
150
Ts(
o
C)
Fig.2 Power derating curve.
1998 Oct 02 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
f
T
C
re
G
UM
2
|S
|
21
collector-base breakdown voltage IC= 0.1 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 15 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector-base leakage current VCB=10V; IE=0 −−100 nA
DC current gain IC= 70 mA; VCE= 8 V; see Fig.3 60 120 250
transition frequency IC= 80 mA; VCE=4V;
− 5 − GHz
f = 1 GHz; see Fig.5
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz;
− 0.7 − pF
see Fig.4
maximum unilateral power gain;
note 1
insertion power gain IC= 80 mA; VCE=4V;
IC= 80 mA; VCE=4V;
f = 900 MHz; T
I
= 80 mA; VCE= 4 V; f = 2 GHz;
C
T
=25°C
amb
f = 900 MHz; T
amb
amb
=25°C
=25°C
− 13 − dB
− 7.5 − dB
− 11 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
1998 Oct 02 4
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