Philips BFG541 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG541
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
age
4
123
Top view
MSB002 - 1
Fig.1 SOT223.
September 1995 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
S
21
F noise figure Γ
P
L1
ITO third order intercept point I
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−120 mA
total power dissipation up to Ts= 140 °C; note 1 −−650 mW
DC current gain IC= 40 mA; VCE=8 V; Tj=25°C 60 120 250
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;
=25°C
T
amb
maximum unilateral power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;
T
=25°C
amb
I
= 40 mA; VCE= 8 V; f = 2 GHz;
C
T
=25°C
amb
2
insertion power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;
T
=25°C
amb
= Γ
; IC= 10 mA; VCE=8 V;
s
opt
output power at 1 dB gain
compression
f = 900 MHz; T
IC= 40 mA; VCE= 8 V; RL=50Ω;
f = 900 MHz; T
= 40 mA; VCE= 8 V; RL=50Ω;
C
f = 900 MHz; T
amb
amb
amb
=25°C
=25°C
=25°C
− 9 − GHz
− 15 − dB
− 9 − dB
13 14 − dB
− 1.3 1.8 dB
− 21 − dBm
− 34 − dBm
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CES
EBO
C
tot
stg
j
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 120 mA
total power dissipation up to Ts= 140 °C; note 1 − 650 mW
storage temperature −65 150 °C
junction temperature − 175 °C
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
up to Ts= 140 °C; note 1 55 K/W
soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
2
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 34 − dBm
V
o
d
2
collector cut-off current IE= 0; VCB=8 V −−50 nA
DC current gain IC= 40 mA; VCE= 8 V 60 120 250
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 1 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral power gain
(note 1)
IC= 40 mA; VCE= 8 V; f = 900 MHz;
T
=25°C
amb
I
= 40 mA; VCE= 8 V; f = 2 GHz;
C
T
=25°C
amb
insertion power gain Ic= 40 mA; VCE= 8 V; f = 900 MHz;
T
=25°C
amb
= Γ
; IC= 10 mA; VCE=8 V;
s
opt
output power at 1 dB gain
compression
f = 900 MHz; T
= Γ
Γ
; IC= 40 mA; VCE=8 V;
s
opt
f = 900 MHz; T
Γ
= Γ
; IC= 10 mA; VCE=8 V;
s
opt
f = 2 GHz; T
Ic= 40 mA; VCE= 8 V; RL=50Ω;
f = 900 MHz; T
amb
=25°C
amb
=25°C
amb
=25°C
=25°C
amb
− 9 − GHz
− 15 − dB
− 9 − dB
13 14 − dB
− 1.3 1.8 dB
− 1.9 2.4 dB
− 2.1 − dB
− 21 − dBm
output voltage note 3 − 500 − mV
second order intermodulation
note 4 −−50 − dB
distortion
Notes
1. G
2. IC= 40 mA; VCE= 8 V; RL=50Ω; f = 900 MHz; T
is the maximum unilateral power gain, assuming S12is zero and
UM
G
UM
--------------------------------------------------------------
10 log
1S
–
2
S
21
2
1S
–
11
22
dB.=
2
=25°C;
amb
fp= 900 MHz; fq= 902 MHz;
measured at f
= 898 MHz and at f
(2p−q)
(2p−q)
= 904 MHz.
3. dim= −60 dB (DIN 45004B); IC= 40 mA; VCE= 8 V; ZL=Zs=75Ω; T
Vp=Vo;Vq=Vo−6 dB; Vr=Vo−6 dB;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f
4. IC= 40 mA; VCE= 8 V; Vo= 325 mV; T
= 793.25 MHz
(p+q−r)
amb
=25°C;
fp= 250 MHz; fq= 560 MHz;
measured at f
(p+q)
= 810 MHz
September 1995 4
amb
=25°C;
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