Philips BFG541 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFG541

NPN 9 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFG541

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.

The transistors are mounted in a
plastic SOT223 envelope.

PINNING

PIN DESCRIPTION

1 emitter
2 base
3 emitter
4 collector

age

4

123

Top view

MSB002 - 1

Fig.1 SOT223.

September 1995 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFG541

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

C

re

f

T

G

UM

S



21

F noise figure Γ

P

L1

ITO third order intercept point I

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−120 mA
total power dissipation up to Ts= 140 °C; note 1 −−650 mW
DC current gain IC= 40 mA; VCE=8 V; Tj=25°C 60 120 250
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

=25°C

T

amb

maximum unilateral power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;

T

=25°C

amb

I

= 40 mA; VCE= 8 V; f = 2 GHz;

C

T

=25°C

amb

2

insertion power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;

T

=25°C

amb

= Γ

; IC= 10 mA; VCE=8 V;

s

opt

output power at 1 dB gain
compression

f = 900 MHz; T
IC= 40 mA; VCE= 8 V; RL=50Ω;

f = 900 MHz; T

= 40 mA; VCE= 8 V; RL=50Ω;

C

f = 900 MHz; T

amb

amb

amb

=25°C

=25°C

=25°C

− 9 − GHz

− 15 − dB

− 9 − dB

13 14 − dB

− 1.3 1.8 dB

− 21 − dBm

− 34 − dBm

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CES
EBO

C

tot
stg
j

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 120 mA
total power dissipation up to Ts= 140 °C; note 1 − 650 mW
storage temperature −65 150 °C
junction temperature − 175 °C

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

thermal resistance from junction to

up to Ts= 140 °C; note 1 55 K/W

soldering point

Note

is the temperature at the soldering point of the collector tab.

1. T

s

September 1995 3

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFG541

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

2

S



21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 34 − dBm
V

o

d

2

collector cut-off current IE= 0; VCB=8 V −−50 nA
DC current gain IC= 40 mA; VCE= 8 V 60 120 250
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 1 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain
(note 1)

IC= 40 mA; VCE= 8 V; f = 900 MHz;
T

=25°C

amb

I

= 40 mA; VCE= 8 V; f = 2 GHz;

C

T

=25°C

amb

insertion power gain Ic= 40 mA; VCE= 8 V; f = 900 MHz;

T

=25°C

amb

= Γ

; IC= 10 mA; VCE=8 V;

s

opt

output power at 1 dB gain
compression

f = 900 MHz; T

= Γ

Γ

; IC= 40 mA; VCE=8 V;

s

opt

f = 900 MHz; T

Γ

= Γ

; IC= 10 mA; VCE=8 V;

s

opt

f = 2 GHz; T
Ic= 40 mA; VCE= 8 V; RL=50Ω;

f = 900 MHz; T

amb

=25°C

amb

=25°C

amb

=25°C

=25°C

amb

− 9 − GHz

− 15 − dB

− 9 − dB

13 14 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

− 21 − dBm

output voltage note 3 − 500 − mV
second order intermodulation

note 4 −−50 − dB

distortion

Notes

1. G

2. IC= 40 mA; VCE= 8 V; RL=50Ω; f = 900 MHz; T

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



1S

–



11

22

dB.=

2

=25°C;

amb

fp= 900 MHz; fq= 902 MHz;
measured at f

= 898 MHz and at f

(2p−q)

(2p−q)

= 904 MHz.

3. dim= −60 dB (DIN 45004B); IC= 40 mA; VCE= 8 V; ZL=Zs=75Ω; T
Vp=Vo;Vq=Vo−6 dB; Vr=Vo−6 dB;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f

4. IC= 40 mA; VCE= 8 V; Vo= 325 mV; T

= 793.25 MHz

(p+q−r)

amb

=25°C;
fp= 250 MHz; fq= 560 MHz;
measured at f

(p+q)

= 810 MHz

September 1995 4

amb

=25°C;