Philips BFG540W-XR, BFG540W-X, BFG540W Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFG540W
BFG540W/X; BFG540W/XR

NPN 9 GHz wideband transistor

Product specification
Supersedes data of August 1995
File under Discrete Semiconductors, SC14

1997 Dec 04

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

APPLICATIONS

They are intended for applications in
the RF front end, in wideband
applications in the GHz range such as
analog and digital cellular telephones,
cordless telephones (CT2, CT3,
PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.

DESCRIPTION

NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343N and SOT343R
packages.

MARKING

TYPE NUMBER CODE

BFG540W N9
BFG540W/X N7
BFG540W/XR N8

PINNING

PIN DESCRIPTION

BFG540W (see Fig.1)

1 collector
2 base
3 emitter
4 emitter

BFG540W/X (see Fig.1)

1 collector
2 emitter
3 base
4 emitter

BFG540W/XR (see Fig.2)

1 collector
2 emitter
3 base
4 emitter

BFG540W

BFG540W/X; BFG540W/XR

page

12

Top view

Fig.1 SOT343N.

page

21

Top view

Fig.2 SOT343R.

34

MSB014

43

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

C

re

f

T

G

UM

2

|

|s

21

F noise figure Γ

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−120 mA
total power dissipation up to Ts=85°C −−500 mW
DC current gain IC= 40 mA; VCE= 8 V 60 120 250
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz; T
maximum unilateral

power gain

IC= 40 mA; VCE= 8 V; f = 900 MHz; T
I

= 40 mA; VCE= 8 V; f = 2 GHz; T

C

insertion power gain IC= 40 mA; VCE= 8 V; f = 900 MHz; T

; IC= 10 mA; VCE=8V; f=2GHz − 2.1 − dB

s=Γopt

=25°C − 9 − GHz

amb

=25°C − 16 − dB

amb

=25°C10−dB

amb

=25°C14 15 − dB

amb

1997 Dec 04 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

BFG540W

BFG540W/X; BFG540W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note to the “Limiting values” and “Thermal characteristics”

1. T

s

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 120 mA
total power dissipation up to Ts=85°C; see Fig.3; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

thermal resistance from junction to soldering point up to Ts=85°C; note 1 180 K/W

is the temperature at the soldering point of the collector pin.

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

VCE≤ 10 V.

150

T ( C)

Fig.3 Power derating curve.

MBG248

s

o

1997 Dec 04 3

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

BFG540W

BFG540W/X; BFG540W/XR

CHARACTERISTICS

T

=25°C (unless otherwise specified).

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

h

FE

f

T

C

c

C

e

C

re

G

UM

2

|s

|

21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 34 − dBm
V

o

d

2

collector-base breakdown

open emitter; IC=10µA; IE=0 20 −−V

voltage
collector-emitter breakdown

RBE= 0; IC=40µA15−−V

voltage
emitter-base breakdown

open collector; IE= 100 µA; IC= 0 2.5 −−V

voltage
collector cut-off current open emitter; VCB=8V; IE=0 −−50 nA
DC current gain IC= 40 mA; VCE= 8 V 60 120 250
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

− 9 − GHz

collector capacitance IE=ie= 0; VCB=8V; f=1MHz − 0.9 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
maximum unilateral power

gain; note 1

insertion power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;

IC= 40 mA; VCE= 8 V; f = 900 MHz;
T

=25°C

amb

= 40 mA; VCE= 8 V; f = 2 GHz;

I

C

T

=25°C

amb

T

=25°C

amb

; IC= 10 mA; VCE=8V;

s=Γopt

− 16 − dB

− 10 − dB

14 15 − dB

− 1.3 1.8 dB

f = 900 MHz

Γ

; IC= 40 mA; VCE=8V;

s=Γopt

− 1.9 2.4 dB

f = 900 MHz

Γ

s=Γopt

; IC= 10 mA; VCE=8V;

− 2.1 − dB

f = 2 GHz

output power at 1 dB gain
compression

IC= 40 mA; VCE= 8 V; f = 900 MHz;
RL=50Ω; T

amb

=25°C

− 21 − dBm

output voltage note 3 − 500 − mV
second order intermodulation

note 4 −−50 − dB

distortion

Notes

1. G

2. IC= 40 mA; VCE=8V; RL=50Ω; T

is the maximum unilateral power gain, assuming s12 is zero.

UM

amb

a) fp= 900 MHz; fq= 902 MHz; measured at f

=25°C;

(2p − q)

G

UM

= 898 MHz and f

(2q − p)

10

-----------------------------------------------------------­1s

–()1s

= 904 MHz.

2

s

21

2

11

–()

22

3. dim= −60 dB (DIN45004B); Vp=Vo; Vq=Vo−6 dB; Vr=Vo−6 dB; RL=75Ω; VCE= 8 V; IC= 40 mA;
a) fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at f

4. IC= 40 mA; VCE= 8 V; Vo= 275 mV; RL=75Ω; T
a) fp= 250 MHz; fq= 560 MHz; measured at f

(p+q)

=25°C;

amb

= 810 MHz.

(p+q−r)

= 793.25 MHz.

1997 Dec 04 4

dB.log=

2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

250

handbook, halfpage

h

FE

200

150

100

50

0

−2

10

10

−1

11010

MRA749

IC (mA)

2

handbook, halfpage

1

C

re

(pF)

0.8

0.6

0.4

0.2

0

04

BFG540W

BFG540W/X; BFG540W/XR

MRA750

812

VCB (V)

VCE=8V.

Fig.4 DCcurrent gain as a function of

12

handbook, halfpage

f

T

(GHz)

8

4

0

1

collector current; typical values.

MLC044

V = 8 V

CE

V = 4 V

CE

110

10

I (mA)

C

IC= 0; f = 1 MHz.

Fig.5 Feedback capacitance as a function of

collector-base voltage; typical values.

2

10

f = 1 GHz; T

amb

=25°C.

Fig.6 Transition frequency as a function of

collector current; typical values.

1997 Dec 04 5