Philips BFG540-XR, BFG540-X, BFG540 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFG540; BFG540/X; BFG540/XR

NPN 9 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.

The transistors are mounted in plastic
SOT143B and SOT143R packages.

PINNING

PIN DESCRIPTION

BFG540 (Fig.1) Code: N37
1 collector
2 base
3 emitter
4 emitter
BFG540/X (Fig.1) Code: N43
1 collector
2 emitter
3 base
4 emitter
BFG540/XR (Fig.2) Code: N49
1 collector
2 emitter
3 base
4 emitter

BFG540; BFG540/X;

BFG540/XR

handbook, 2 columns

12

Top view

Fig.1 SOT143B.

handbook, 2 columns

Top view

Fig.2 SOT143R.

34

MSB014

43

12

MSB035

September 1995 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

C

re

f

T

G

UM

2

S

21

F noise figure Γ

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−120 mA
total power dissipation up to Ts=60°C; note 1 −−400 mW
DC current gain IC= 40 mA; VCE=8V; Tj=25°C 60 120 250
feedback capacitance IC= 0; VCE=8V; f=1MHz − 0.5 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

=25°C

T

amb

maximum unilateral power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;

T

=25°C

amb

I

= 40 mA; VCE= 8 V; f = 2 GHz;

C

T

=25°C

amb

insertion power gain I

= 40 mA; VCE= 8 V; f = 900 MHz;

C

T

=25°C

amb

= Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 900 MHz; T

= Γ

Γ

; IC= 40 mA; VCE=8V;

s

opt

f = 900 MHz; T

Γ

= Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 2 GHz; T

amb

=25°C

amb

=25°C

amb

=25°C

− 9 − GHz

− 18 − dB

− 11 − dB

15 16 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CES
EBO

C

tot
stg
j

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 120 mA
total power dissipation up to Ts=60°C (note 1) − 400 mW
storage temperature −65 +150 °C
junction temperature − 150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point up to Ts=60°C note 1 290 K/W

Note

is the temperature at the soldering point of the collector pin.

1. T

s

September 1995 3

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

2

S

21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 34 − dBm
V

O

d

2

collector cut-off current IE= 0; VCB=8V −−50 nA
DC current gain IC= 40 mA; VCE= 8 V 60 120 250
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
collector capacitance IE=ie= 0; VCB=8V; f=1MHz − 0.9 − pF
feedback capacitance IC= 0; VCB=8V; f=1MHz − 0.5 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain
(note 1)

insertion power gain I

output power at 1 dB gain
compression

IC= 40 mA; VCE= 8 V; f = 900 MHz;
T

=25°C

amb

I

= 40 mA; VCE= 8 V; f = 2 GHz;

C

T

=25°C

amb

= 40 mA; VCE= 8 V; f = 900 MHz;

C

T

=25°C

amb

= Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 900 MHz; T

= Γ

Γ

; IC= 40 mA; VCE=8V;

s

opt

f = 900 MHz; T

Γ

= Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 2 GHz; T

amb

=25°C

amb

=25°C

amb

=25°C

IC= 40 mA; VCE=8V; RL=50Ω;
f = 900 MHz; T

amb

=25°C

− 9 − GHz

− 18 − dB

− 11 − dB

15 16 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

− 21 − dBm

output voltage note 3 − 500 − mV
second order intermodulation

note 4 −−50 − dB

distortion

Notes

1. G

2. VCE= 8 V; IC= 40 mA; RL=50Ω; T

is the maximum unilateral power gain, assuming S12 is zero and

UM

=25°C;

amb

fp= 900 MHz; fq= 902 MHz;
measured at f

= 898 MHz and f

(2p −q)

(2q − p)

= 904 MHz.

3. dim= −60 dB (DIN 45004B); IC= 40 mA; VCE= 8 V; ZL=ZS=75Ω; T
Vp=VO; Vq=VO−6 dB; Vr=VO−6 dB;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f

(p+q−r)

4. IC= 40 mA; VCE= 8 V; VO= 275 mV; T
fp= 250 MHz; fq= 560 MHz; measured at f

= 793.25 MHz.

amb

=25°C;

= 810 MHz.

(p+q)

September 1995 4

G

amb

UM

10

=25°C;

2

S

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

22

dB.log=

2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor

150

Ts(

MBG249

o

C)

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

VCE≤ 10 V.

250

handbook, halfpage

h

FE

200

150

100

50

0

−2

10

VCE= 8 V; Tj = 25 °C.

BFG540; BFG540/X;

BFG540/XR

−1

10

11010

IC (mA)

MRA749

2

handbook, halfpage

1

C

re

(pF)

0.8

0.6

0.4

0.2

0

04

Fig.3 Power derating curve.

812

VCB (V)

MRA750

Fig.4 DC current gain as a function of

12

handbook, halfpage

f

T

(GHz)

8

4

0

−1

10

collector current.

MRA751

V

= 8 V

CE

V

= 4 V

CE

11010

IC (mA)

2

IC= 0; f = 1 MHz.

Fig.5 Feedback capacitance as a function of

collector-base voltage.

September 1995 5

f = 1 GHz; T

amb

=25°C.

Fig.6 Transition frequency as a function of

collector current.