Philips BFG520-XR, BFG520-X, BFG520 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN DESCRIPTION
BFG520 (Fig.1) Code: N36
1 collector
2 base
3 emitter
4 emitter
BFG520/X (Fig.1) Code: N42
1 collector
2 emitter
3 base
4 emitter
BFG520/XR (Fig.2) Code: N48
1 collector
2 emitter
3 base
4 emitter
page
12
Top view
Fig.1 SOT143B.
handbook, 2 columns
Top view
Fig.2 SOT143R.
34
MSB014
43
12
MSB035
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
c
P
tot
h
FE
C
re
f
T
G
UM
2
S
21
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
DC collector current −−70 mA
total power dissipation up to Ts=88°C; note 1 −−300 mW
DC current gain IC= 20 mA; VCE= 6 V; Tj=25°C 60 120 250
feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz;
=25°C
T
amb
maximum unilateral
power gain
IC= 20 mA; VCE= 6 V; f = 900 MHz;
T
=25°C
amb
I
= 20 mA; VCE= 6 V; f = 2 GHz;
C
T
=25°C
amb
insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;
T
=25°C
amb
= Γ
s
f = 900 MHz; T
Γ
s
f = 900 MHz; T
Γ
s
f = 2 GHz; T
; Ic= 5 mA; VCE=6V;
opt
=25°C
amb
= Γ
; IC= 20 mA; VCE=6 V;
opt
=25°C
amb
= Γ
; IC= 5 mA; VCE= 8 V;
opt
=25°C
amb
− 9 − GHz
− 19 − dB
− 13 − dB
17 18 − dB
− 1.1 1.6 dB
− 1.6 2.1 dB
− 1.9 − dB
September 1995 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 70 mA
total power dissipation up to Ts = 88 °C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C
thermal resistance from junction to
up to Ts=88°C; note 1 290 K/W
soldering point
Note
1. T
is the temperature at the soldering point of the collector tab.
s
September 1995 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 26 − dBm
V
o
d
2
collector cut-off current IE = 0; VCB = 6 V −− 50 nA
DC current gain IC= 20 mA; VCE= 6 V 60 120 250
emitter capacitance IC=ic=0;VEB= 0.5 V; f = 1 MHz − 1 − pF
collector capacitance IE=ie=0;VCB= 6 V; f = 1 MHz − 0.6 − pF
feedback capacitance IC=0;VCB= 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral
power gain (note 1)
2
insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;
output power at 1 dB gain
compression
IC= 20 mA; VCE= 6 V; f = 900 MHz;
T
= 25 °C
amb
I
= 20 mA; VCE= 6 V; f = 2 GHz;
C
T
= 25 °C
amb
T
= 25 °C
amb
= Γ
s
f = 900 MHz; T
= Γ
Γ
s
f = 900 MHz; T
Γ
= Γ
s
f = 2 GHz; T
= 5 mA; VCE=6V;
opt;IC
=25°C
amb
; IC= 20 mA; VCE=6 V;
opt
=25°C
amb
= 5 mA; VCE=6 V;
opt;IC
=25°C
amb
IC= 20 mA; VCE= 6 V; RL=50Ω;
f = 900 MHz; T
amb
=25°C
− 9 − GHz
− 19 − dB
− 13 − dB
17 18 − dB
− 1.1 1.6 dB
− 1.6 2.1 dB
− 1.9 − dB
− 17 − dBm
output voltage note 3 − 275 − mV
second order intermodulation
distortion
IC= 20 mA; VCE= 6 V; Vo= 75 mV;
T
amb
=25°C; f
(p+q)
= 810 MHz
−−50 − dB
Notes
1. G
2. I
is the maximum unilateral power gain, assuming S12is zero and
UM
G
UM
= 20 mA; VCE= 6 V; RL=50Ω; f = 900 MHz; T
C
--------------------------------------------------------------
10 log
1S
–
2
S
21
2
1S
–
11
22
dB.=
2
=25°C;
amb
fp= 900 MHz; fq= 902 MHz;
measured at f
= 898 MHz and f
(2p−q)
(2q−p)
= 904 MHz.
3. dim= −60 dB (DIN 45004B);
Vp=Vo;Vq=Vo−6 dB; Vr=Vo−6 dB;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f
= 793.25 MHz
(p+q−r)
September 1995 4
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